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      Dislocation density dependent electroabsorption in epitaxial lateral overgrown InGaN/GaN quantum structures

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      Author
      Sari, E.
      Jang, L. W.
      Baek, J. H.
      Lee, I. H.
      Sun, X. W.
      Demir, Hilmi Volkan
      Date
      2013-01-14
      Source Title
      Optics Express
      Print ISSN
      1094-4087
      Publisher
      Optical Society of America
      Volume
      21
      Issue
      1
      Pages
      1128 - 1136
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      We study electroabsorption (EA) behavior of InGaN/GaN quantum structures grown using epitaxial lateral overgrowth (ELOG) in correlation with their dislocation density levels and in comparison to steady state and time-resolved photoluminescence measurements. The results reveal that ELOG structures with decreasing mask stripe widths exhibit stronger EA performance, with a maximum EA enhancement factor of 4.8 compared to the reference without ELOG. The analyses show that the EA performance follows similar trends with decreasing dislocation density as the essential parameters of the photoluminescence spectra (peak position, width and intensity) together with the photoluminescence lifetimes. While keeping the growth window widths constant, compared to photoluminescence behavior, however, EA surprisingly exhibits the largest performance variation, making EA the most sensitive to the mask stripe widths. (C) 2013 Optical Society of America
      Keywords
      Light-emitting-diodes
      Vapor-phase Epitaxy
      Gallium-nitride
      Output Power
      Laser-diodes
      Gan
      Blue
      Wells,modulator
      Field
      Permalink
      http://hdl.handle.net/11693/11910
      Published Version (Please cite this version)
      http://dx.doi.org/10.1364/OE.21.001128
      Collections
      • Department of Electrical and Electronics Engineering 3597
      • Department of Physics 2329
      • Institute of Materials Science and Nanotechnology (UNAM) 1831
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