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dc.contributor.authorJi Y.en_US
dc.contributor.authorZhang Z.-H.en_US
dc.contributor.authorKyaw, Z.en_US
dc.contributor.authorTan S.T.en_US
dc.contributor.authorJu, Z. G.en_US
dc.contributor.authorZhang, X. L.en_US
dc.contributor.authorLiu W.en_US
dc.contributor.authorSun, X. W.en_US
dc.contributor.authorDemir, H. V.en_US
dc.date.accessioned2015-07-28T11:58:57Z
dc.date.available2015-07-28T11:58:57Z
dc.date.issued2013-08-01en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/11842
dc.description.abstractThe effect of n-AlGaN versus p-AlGaN electron-blocking layers (EBLs) on the performance of InGaN/GaN light-emitting diodes is studied in this work. Experimental results suggest that the n-type EBL leads to higher optical output power and external quantum efficiency, compared to the devices with p-AlGaN EBL, which is commonly used today. Numerical simulations on the carrier distribution and energy band diagram reveal that the n-AlGaN EBL is more efficient in preventing electron overflow, while not blocking the hole injection into the active region, hence leading to higher radiative recombination rate within the multiple quantum wells active region. © 2013 AIP Publishing LLC.en_US
dc.language.isoEnglishen_US
dc.source.titleApplied Physics Lettersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4817381en_US
dc.subjectActive Regionsen_US
dc.subjectCarrier Distributionsen_US
dc.subjectElectron Overflowen_US
dc.subjectEnergy-band Diagramen_US
dc.subjectExternal Quantum Efficiencyen_US
dc.subjectHole Injectionen_US
dc.subjectOptical Output Poweren_US
dc.subjectRadiative Recombination Rateen_US
dc.titleInfluence of n-type versus p-type AlGaN electron-blocking layer on InGaN/GaN multiple quantum wells light-emitting diodesen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnologyen_US
dc.citation.spage053512-1en_US
dc.citation.epage053512-5en_US
dc.citation.volumeNumber103en_US
dc.citation.issueNumber5en_US
dc.identifier.doi10.1063/1.4817381en_US
dc.publisherAIP Publishingen_US


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