Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers
Author(s)
Date
2013Source Title
Applied Physics Letters
Print ISSN
0003-6951
Publisher
AIP Publishing
Volume
102
Issue
24
Pages
243504-1 - 243504-3
Language
English
Type
ArticleItem Usage Stats
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Abstract
InGaN/GaN light-emitting diodes (LEDs) with graded-thickness quantum barriers (GTQB) are designed and grown by metal-organic chemical-vapor deposition. The proposed GTQB structure, in which the barrier thickness decreases from the n-GaN to p-GaN side, was found to lead to an improved uniformity in the hole distribution and thus, radiative recombination rates across the active region. Consequently, the efficiency droop was reduced to 28.4% at a current density of 70 A/cm2, which is much smaller than that of the conventional equal-thickness quantum barriers (ETQB) LED, which is 48.3%. Moreover, the light output power was enhanced from 770 mW for the ETQB LEDs to 870 mW for the GTQB LEDs at 70 A/cm2. © 2013 AIP Publishing LLC.
Keywords
Active RegionsBarrier Thickness
Efficiency Droops
Hole Distribution
Ingan/gan Lightemitting Diodes (leds)
Light Output Power
Quantum Barriers
Radiative Recombination Rate
Gallium Nitride
Organic Chemicals
Light Emitting Diodes