Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

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Author
Ju, Z. G.
Liu, W.
Zhang, Z. H.
Tan, S. T.
Ji, Y.
Kyaw, Z. B.
Zhang, X. L.
Lu, S. P.
Zhang, Y. P.
Zhu, B.
Hasanov, N.
Sun, X. W.
Demir, H. V.
Date Issued
2013
Journal Title
Applied Physics Letters
Publisher
AIP Publishing
Language
English
Type
Article
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Citation
Ju, Z. G., Liu, W., Zhang, Z. H., Tan, S. T., Ji, Y., Kyaw, Z. B., ... & Hasanov, N. (2013). Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers. Applied Physics Letters, 102(24), 243504.
Please cite this item using this persistent URL
http://hdl.handle.net/11693/11809
Abstract
InGaN/GaN light-emitting diodes (LEDs) with graded-thickness quantum barriers (GTQB) are designed and grown by metal-organic chemical-vapor deposition. The proposed GTQB structure, in which the barrier thickness decreases from the n-GaN to p-GaN side, was found to lead to an improved uniformity in the hole distribution and thus, radiative recombination rates across the active region. Consequently, the efficiency droop was reduced to 28.4% at a current density of 70 A/cm2, which is much smaller than that of the conventional equal-thickness quantum barriers (ETQB) LED, which is 48.3%. Moreover, the light output power was enhanced from 770 mW for the ETQB LEDs to 870 mW for the GTQB LEDs at 70 A/cm2. © 2013 AIP Publishing LLC.
Published as
http://dx.doi.org/10.1063/1.4811698
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