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      Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

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      Author(s)
      Ju, Z. G.
      Liu, W.
      Zhang, Z. H.
      Tan, S. T.
      Ji, Y.
      Kyaw, Z. B.
      Zhang, X. L.
      Lu, S. P.
      Zhang, Y. P.
      Zhu, B.
      Hasanov, N.
      Sun, X. W.
      Demir, Hilmi Volkan
      Date
      2013
      Source Title
      Applied Physics Letters
      Print ISSN
      0003-6951
      Publisher
      AIP Publishing
      Volume
      102
      Issue
      24
      Pages
      243504-1 - 243504-3
      Language
      English
      Type
      Article
      Item Usage Stats
      167
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      146
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      Abstract
      InGaN/GaN light-emitting diodes (LEDs) with graded-thickness quantum barriers (GTQB) are designed and grown by metal-organic chemical-vapor deposition. The proposed GTQB structure, in which the barrier thickness decreases from the n-GaN to p-GaN side, was found to lead to an improved uniformity in the hole distribution and thus, radiative recombination rates across the active region. Consequently, the efficiency droop was reduced to 28.4% at a current density of 70 A/cm2, which is much smaller than that of the conventional equal-thickness quantum barriers (ETQB) LED, which is 48.3%. Moreover, the light output power was enhanced from 770 mW for the ETQB LEDs to 870 mW for the GTQB LEDs at 70 A/cm2. © 2013 AIP Publishing LLC.
      Keywords
      Active Regions
      Barrier Thickness
      Efficiency Droops
      Hole Distribution
      Ingan/gan Lightemitting Diodes (leds)
      Light Output Power
      Quantum Barriers
      Radiative Recombination Rate
      Gallium Nitride
      Organic Chemicals
      Light Emitting Diodes
      Permalink
      http://hdl.handle.net/11693/11809
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.4811698
      Collections
      • Department of Electrical and Electronics Engineering 3702
      • Department of Physics 2397
      • Institute of Materials Science and Nanotechnology (UNAM) 1930
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