Electro-Optic and Electro-absorption characterization of InAs quantum dot waveguides
Akca, I. B.
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/11655
- Department of Physics 
Optical Society of America
Abstract Optical properties of multilayer InAs quantum dot waveguides, grown by molecular beam epitaxy, have been studied under applied electric field. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly enhanced linear electro-optic efficiency compared to bulk GaAs. Electro-absorption measurements at 1300 nm showed increased absorption with applied field accompanied with red shift of the spectra. Spectral shifts of up to 21% under 18 Volt bias was observed at 1320 nm. (C) 2008 Optical Society of America.
Akca, I. B., Dana, A., Aydinli, A., Rossetti, M., Li, L., Fiore, A., & Dagli, N. (2008). Electro-optic and electro-absorption characterization of InAs quantum dot waveguides. Optics express, 16(5), 3439-3444.