Electro-Optic and Electro-absorption characterization of InAs quantum dot waveguides

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Date Issued
2008
Author
Akca, I. B.
Dana, A.
Aydinli, A.
Rossetti, M.
Li, L.
Fiore, A.
Dagli, N.
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Please cite this item using this persistent URL
http://hdl.handle.net/11693/11655
Journal
Optics Express
Published as
http://dx.doi.org/10.1364/OE.16.003439
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Publisher
Optical Society of America
Abstract
Abstract Optical properties of multilayer InAs quantum dot waveguides, grown by molecular beam epitaxy, have been studied under applied electric field. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly enhanced linear electro-optic efficiency compared to bulk GaAs. Electro-absorption measurements at 1300 nm showed increased absorption with applied field accompanied with red shift of the spectra. Spectral shifts of up to 21% under 18 Volt bias was observed at 1320 nm. (C) 2008 Optical Society of America.
Citation
Akca, I. B., Dana, A., Aydinli, A., Rossetti, M., Li, L., Fiore, A., & Dagli, N. (2008). Electro-optic and electro-absorption characterization of InAs quantum dot waveguides. Optics express, 16(5), 3439-3444.