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      Electro-optic and electro-absorption characterization of InAs quantum dot waveguides

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      Author(s)
      Akça, İmran B.
      Dana, Aykutlu
      Aydınlı, Atilla
      Rossetti, M.
      Li, L.
      Fiore, A.
      Dağlı, N.
      Date
      2008-03
      Source Title
      Optics Express
      Publisher
      Optical Society of America
      Volume
      16
      Issue
      5
      Pages
      3439 - 3444
      Language
      English
      Type
      Article
      Item Usage Stats
      204
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      203
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      Abstract
      Abstract Optical properties of multilayer InAs quantum dot waveguides, grown by molecular beam epitaxy, have been studied under applied electric field. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly enhanced linear electro-optic efficiency compared to bulk GaAs. Electro-absorption measurements at 1300 nm showed increased absorption with applied field accompanied with red shift of the spectra. Spectral shifts of up to 21% under 18 Volt bias was observed at 1320 nm. (C) 2008 Optical Society of America.
      Keywords
      Well structures
      Coefficients
      Band
      Permalink
      http://hdl.handle.net/11693/11655
      Published Version (Please cite this version)
      http://dx.doi.org/10.1364/OE.16.003439
      Collections
      • Advanced Research Laboratories (ARL) 35
      • Department of Physics 2550
      • Institute of Materials Science and Nanotechnology (UNAM) 2258
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