A Comparative Passivation Study for InAs/GaSb Pin Superlattice Photodetectors
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/11654
IEEE Journal of Quantum Electronics
- Department of Physics 
In the quest to find ever better passivation techniques for infrared photodetectors, we explore several passivation layers using atomic layer deposition (ALD). We compare the impact of these layers on detectors fabricated under same conditions. We use ALD deposited Al2O3, HfO2, TiO2, ZnO, plasma enhanced chemical vapor deposition deposited SiO2, Si3N4, and sulfur containing octadecanethiol self assembled monolayer passivation layers on InAs/GaSb p-i-n superlattice diodes with an average cutoff wavelength of 5.1 mu m. Passivated and unpassivated photodetectors compared for their electrical performances.
Salihoglu, O., Muti, A., & Aydinli, A. (2013). A comparative passivation study for InAs/GaSb pin superlattice photodetectors. Quantum Electronics, IEEE Journal of, 49(8), 661-666.