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dc.contributor.authorMelik, R.en_US
dc.contributor.authorPerkgoz, N. K.en_US
dc.contributor.authorUnal, E.en_US
dc.contributor.authorDilli, Z.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.date.accessioned2015-07-28T11:58:12Z
dc.date.available2015-07-28T11:58:12Z
dc.date.issued2008-12en_US
dc.identifier.issn0018-9383
dc.identifier.urihttp://hdl.handle.net/11693/11625
dc.description.abstractWe develop and demonstrate an on-chip resonator working at 15 GHz with a high quality factor (Q-factor) of 93.81 while only requiring a small chip size of 195 mu m x 195 mu m on Si by using our new design methodology. In our design, unlike previous approaches, we avoid the need for any external capacitance for tuning; instead, we utilize the film capacitance as the capacitor of the LC tank circuit and realize a fully on-chip resonator that shows a strong transmission dip of > 30 dB on resonance as required for telemetric-sensing applications. We present the design, theory, methodology, microfabrication, experimental characterization, and theoretical analysis of these resonators. We also demonstrate that the experimental results are in excellent agreement with the theoretical (both analytical and numerical) results. Based on our proof-of-concept demonstration, such high-Q on-chip resonators hold great promise for use in transmissive telemetric sensors.en_US
dc.language.isoEnglishen_US
dc.source.titleIEEE Transactions on Electron Devicesen_US
dc.relation.isversionofhttp://doi.org/10.1109/TED.2008.2006533en_US
dc.subjectFabricationen_US
dc.subjectQuality Factor (q-factor)en_US
dc.subjectResonatorsen_US
dc.subjectRficen_US
dc.subjectSiliconen_US
dc.subjectSpiral Inductorsen_US
dc.titleDesign and realization of a fully on-chip High-Q resonator at 15 GHz on siliconen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnologyen_US
dc.citation.spage3459en_US
dc.citation.epage3466en_US
dc.citation.volumeNumber55en_US
dc.citation.issueNumber12en_US
dc.identifier.doi10.1109/TED.2008.2006533en_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.contributor.bilkentauthorDemir, Hilmi Volkanen_US
dc.identifier.eissn1557-9646


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