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      Formation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescence

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      Author
      Yerli, S.
      Serincan, U.
      Dogan, I.
      Tokay, S.
      Genisel, M.
      Aydınlı, Atilla
      Turan, R.
      Date
      2006
      Source Title
      Journal of Applied Physics
      Print ISSN
      0021-8979
      Publisher
      AIP Publishing
      Volume
      100
      Issue
      7
      Pages
      074301-1 - 074301-5
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      Silicon nanocrystals, average sizes ranging between 3 and 7 nm, were formed in sapphire matrix by ion implantation and subsequent annealing. Evolution of the nanocrystals was detected by Raman spectroscopy and x-ray diffraction (XRD). Raman spectra display that clusters in the matrix start to form nanocrystalline structures at annealing temperatures as low as 800 degrees C in samples with high dose Si implantation. The onset temperature of crystallization increases with decreasing dose. Raman spectroscopy and XRD reveal gradual transformation of Si clusters into crystalline form. Visible photoluminescence band appears following implantation and its intensity increases with subsequent annealing process. While the center of the peak does not shift, the intensity of the peak decreases with increasing dose. The origin of the observed photoluminescence is discussed in terms of radiation induced defects in the sapphire matrix.
      Keywords
      Si Nanocrystals
      Raman-scattering
      Al2o3
      Films,luminescence
      Irradiation
      Nanoparticles
      Matrices
      Spectra
      Devices
      Permalink
      http://hdl.handle.net/11693/11560
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.2355543
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      • Department of Physics 2380
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