MOCVD growth and electrical studies of p-type AlGaN with Al fraction 0.35
Journal of Crystal Growth
Yu, H., Ulker, E., & Ozbay, E. (2006). MOCVD growth and electrical studies of p-type AlGaN with Al fraction 0.35. Journal of crystal growth, 289(2), 419-422.
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/11497
We present a study on the high performance p-type AlxGa1-xN (x = 0.35) layers grown by low-pressure metalorganic chemical vapor deposition on AIN template/sapphire substrate. The influence of growth conditions on the p-type conductivity of the AlxGa1-xN (x = 0.35) alloy is investigated. From the Hall effect and I-V transmission line model measurements, a p-type resistivity of 3.5 Omega cm for AlxGa1-xN (x = 0.35) epilayers are achieved. To the best of our knowledge, this is the lowest resistivity ever measured for the uniform p-type AlGaN with Al fraction higher than 0.3. The Mg and impurities (O, C and H) of the atom concentration in the epi-layers are analyzed by means of SIMS depth profiles, which reveal the dependence of impurities incorporation on the III elements and growth temperature. (c) 2006 Elsevier B.V. All rights reserved.