MOCVD growth and electrical studies of p-type AlGaN with Al fraction 0.35
Journal of Crystal Growth
Elsevier BV * North-Holland
419 - 422
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We present a study on the high performance p-type AlxGa1-xN (x = 0.35) layers grown by low-pressure metalorganic chemical vapor deposition on AIN template/sapphire substrate. The influence of growth conditions on the p-type conductivity of the AlxGa1-xN (x = 0.35) alloy is investigated. From the Hall effect and I-V transmission line model measurements, a p-type resistivity of 3.5 Omega cm for AlxGa1-xN (x = 0.35) epilayers are achieved. To the best of our knowledge, this is the lowest resistivity ever measured for the uniform p-type AlGaN with Al fraction higher than 0.3. The Mg and impurities (O, C and H) of the atom concentration in the epi-layers are analyzed by means of SIMS depth profiles, which reveal the dependence of impurities incorporation on the III elements and growth temperature.
A3. Metalorganic chemical vapor deposition
B2. Semiconducting aluminum compounds