MOCVD growth and electrical studies of p-type AlGaN with Al fraction 0.35
Journal of Crystal Growth
Elsevier BV * North-Holland
419 - 422
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Please cite this item using this persistent URLhttp://hdl.handle.net/11693/11497
We present a study on the high performance p-type AlxGa1-xN (x = 0.35) layers grown by low-pressure metalorganic chemical vapor deposition on AIN template/sapphire substrate. The influence of growth conditions on the p-type conductivity of the AlxGa1-xN (x = 0.35) alloy is investigated. From the Hall effect and I-V transmission line model measurements, a p-type resistivity of 3.5 Omega cm for AlxGa1-xN (x = 0.35) epilayers are achieved. To the best of our knowledge, this is the lowest resistivity ever measured for the uniform p-type AlGaN with Al fraction higher than 0.3. The Mg and impurities (O, C and H) of the atom concentration in the epi-layers are analyzed by means of SIMS depth profiles, which reveal the dependence of impurities incorporation on the III elements and growth temperature.