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      X-ray photoelectron spectroscopy for resistance-capacitance measurements of surface structures

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      Author(s)
      Ertas, G.
      Demirok, U. K.
      Atalar, Abdullah
      Süzer, Şefik
      Date
      2005-04-29
      Source Title
      Applied Physics Letters
      Print ISSN
      0003-6951
      Publisher
      AIP Publishing
      Volume
      86
      Issue
      18
      Pages
      183110-1 - 183110-3
      Language
      English
      Type
      Article
      Item Usage Stats
      242
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      234
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      Abstract
      In x-ray photoemission measurements, differential charging causes the measured binding energy difference between the Si 2p of the oxide and the silicon substrate to vary nonlinearly as a function of the applied external do voltage stress, which controls the low-energy electrons going into and out of the sample. This nonlinear variation is similar to the system where a gold metal strip is connected to the same voltage stress through an external 10 Mohm series resistor and determined again by x-ray photoelectron spectroscopy (XPS). We utilize this functional resemblance to determine the resistance of the 4 nm SiO2 layer on a silicon substrate as 8 Mohm. In addition, by performing time-dependent XPS measurements (achieved by pulsing the voltage stress), we determine the time constant for charging/discharging of the same system as 2.0 s. Using an equivalent circuit, consisting of a gold metal strip connected through a 10 Mohm series resistor and a 56 nF parallel capacitor, and performing time-dependent XPS measurements, we also determine the time constant as 0.50 s in agreement with the expected value (0.56 s). Using this time constant and the resistance (8.0 Mohm), we can determined the capacitance of the 4 nm SiO2 layer as 250 nF in excellent agreement with the calculated value. Hence, by application of external do and pulsed voltage stresses, an x-ray photoelectron spectrometer is turned into a tool for extracting electrical parameters of surface structures in a noncontact fashion. (c) 2005 American Institute of Physics.
      Keywords
      S?o2/s? system
      Hole transport
      Xps
      Permalink
      http://hdl.handle.net/11693/11399
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.1919396
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      • Department of Chemistry 707
      • Department of Electrical and Electronics Engineering 4011
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