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dc.contributor.authorSayan, S.en_US
dc.contributor.authorEmge, T.en_US
dc.contributor.authorGarfunkel, E.en_US
dc.contributor.authorZhao, X.en_US
dc.contributor.authorWielunski, L.en_US
dc.contributor.authorBartynski, R. A.en_US
dc.contributor.authorVanderbilt, D.en_US
dc.contributor.authorSuehle, J. S.en_US
dc.contributor.authorSüzer, Şefiken_US
dc.contributor.authorBanaszak Holl, M.en_US
dc.date.accessioned2015-07-28T11:57:33Z
dc.date.available2015-07-28T11:57:33Z
dc.date.issued2004-12-15en_US
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/11693/11391
dc.description.abstractThe valence and conduction band densities of states for the HfO2/SiO2/Si structure are determined by soft x-ray photoemission and inverse photoemission. First principles calculations are used to help in assigning valence band maxima and conduction band minima. The energies of defect states at the band edges are estimated by comparing the theoretical and experimental results. Determinations of the local surface potentials before and after a forming gas anneal are used to help determine the possible location of the charge in the film.en_US
dc.language.isoEnglishen_US
dc.source.titleJournal of Applied Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.1803107en_US
dc.subjectChemical-vapor-depositionen_US
dc.subjectBinding-energyen_US
dc.subjectHafnium Oxideen_US
dc.subjectCore-levelen_US
dc.subjectHfo2 Filmsen_US
dc.subjectPhotoemissionen_US
dc.subjectDielectricsen_US
dc.subjectOffsetsen_US
dc.subjectRh(111)en_US
dc.subjectValenceen_US
dc.titleBand alignment issues related to HfO2/SiO2/p-Si gate stacksen_US
dc.typeArticleen_US
dc.departmentDepartment of Chemistryen_US
dc.citation.spage7485en_US
dc.citation.epage7491en_US
dc.citation.volumeNumber96en_US
dc.citation.issueNumber12en_US
dc.identifier.doi10.1063/1.1803107en_US
dc.publisherAmerican Institute of Physicsen_US
dc.contributor.bilkentauthorSüzer, Şefik


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