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      Band alignment issues related to HfO2/SiO2/p-Si gate stacks

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      Author(s)
      Sayan, S.
      Emge, T.
      Garfunkel, E.
      Zhao, X.
      Wielunski, L.
      Bartynski, R. A.
      Vanderbilt, D.
      Suehle, J. S.
      Süzer, Şefik
      Banaszak Holl, M.
      Date
      2004-12-15
      Source Title
      Journal of Applied Physics
      Print ISSN
      0021-8979
      Publisher
      American Institute of Physics
      Volume
      96
      Issue
      12
      Pages
      7485 - 7491
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      The valence and conduction band densities of states for the HfO2/SiO2/Si structure are determined by soft x-ray photoemission and inverse photoemission. First principles calculations are used to help in assigning valence band maxima and conduction band minima. The energies of defect states at the band edges are estimated by comparing the theoretical and experimental results. Determinations of the local surface potentials before and after a forming gas anneal are used to help determine the possible location of the charge in the film.
      Keywords
      Chemical-vapor-deposition
      Binding-energy
      Hafnium Oxide
      Core-level
      Hfo2 Films
      Photoemission
      Dielectrics
      Offsets
      Rh(111)
      Valence
      Permalink
      http://hdl.handle.net/11693/11391
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.1803107
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      • Department of Chemistry 707
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