Band alignment issues related to HfO2/SiO2/p-Si gate stacks
Author(s)
Date
2004-12-15Source Title
Journal of Applied Physics
Print ISSN
0021-8979
Publisher
American Institute of Physics
Volume
96
Issue
12
Pages
7485 - 7491
Language
English
Type
ArticleItem Usage Stats
202
views
views
294
downloads
downloads
Abstract
The valence and conduction band densities of states for the HfO2/SiO2/Si structure are determined by soft x-ray photoemission and inverse photoemission. First principles calculations are used to help in assigning valence band maxima and conduction band minima. The energies of defect states at the band edges are estimated by comparing the theoretical and experimental results. Determinations of the local surface potentials before and after a forming gas anneal are used to help determine the possible location of the charge in the film.
Keywords
Chemical-vapor-depositionBinding-energy
Hafnium Oxide
Core-level
Hfo2 Films
Photoemission
Dielectrics
Offsets
Rh(111)
Valence