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dc.contributor.authorAy, F.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.date.accessioned2015-07-28T11:57:21Z
dc.date.available2015-07-28T11:57:21Z
dc.date.issued2004-06en_US
dc.identifier.issn0925-3467
dc.identifier.urihttp://hdl.handle.net/11693/11308
dc.description.abstractSilicon oxide, silicon nitride and silicon oxynitride layers were grown by a PECVD technique. The resulting refractive indices of the layers varied between 1.47 and 1.93. The compositional properties of the layers were analyzed by FTIR and ATR infrared spectroscopy techniques. Comparative investigation of bonding structures for the three different layers was performed. Special attention was given to analyze N-H bond stretching absorption at 3300-3400 cm(-1). Quantitative results for hydrogen related bonding concentrations are presented based on IR analysis. An annealing study was performed in order to reduce or eliminate this bonding types. For the annealed samples the N-H bond concentration was strongly reduced as verified by FTIR transmittance and ATR spectroscopic methods. A correlation between the N-H concentration and absorption loss was verified for silicon oxynitride slab waveguides. Moreover, a single mode waveguide with silicon oxynitride core layer was fabricated. Its absorption and insertion loss values were determined by butt-coupling method, resulting in low loss waveguides. (C) 2004 Elsevier B.V. All rights reserved.en_US
dc.language.isoEnglishen_US
dc.source.titleOptical Materialsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.optmat.2003.12.004en_US
dc.subjectSilicon oxideen_US
dc.subjectOxynitrideen_US
dc.subjectNitrideen_US
dc.subjectPecvden_US
dc.subjectIr absorptionen_US
dc.subjectOptical lossen_US
dc.subjectWaveguideen_US
dc.titleComparative investigation og hydrogen bonding in silicon based PECVD grown dielectrics for opticalen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage33en_US
dc.citation.epage46en_US
dc.citation.volumeNumber26en_US
dc.citation.issueNumber1en_US
dc.identifier.doi10.1016/j.optmat.2003.12.004en_US
dc.publisherElsevieren_US
dc.contributor.bilkentauthorAydınlı, Atilla
dc.identifier.eissn1873-1252


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