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      Integrated Piezoresistive Sensors for AFM-Guided Scanning Hall Probe Microscopy

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      Author(s)
      Brook, J.
      Bending, S. J.
      Pinto, J.
      Oral, A.
      Ritchie, D.
      Beere, H.
      Henini, M.
      Springthorpe, A.
      Date
      2003
      Source Title
      Applied Physics Letters
      Print ISSN
      0003-6951
      Publisher
      American Institute of Physics
      Volume
      82
      Issue
      20
      Pages
      3538 - 3540
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      We report the development of an advanced sensor for atomic force-guided scanning Hall probe microscopy whereby both a high mobility heterostructure Hall effect magnetic sensor and an n-Al0.4Ga0.6As piezoresistive displacement sensor have been integrated in a single III-V semiconductor cantilever. This allows simple operation in high-vacuum/variable-temperature environments and enables very high magnetic and topographic resolution to be achieved simultaneously. Scans of magnetic induction and topography of a number of samples are presented to illustrate the sensor performance at 300 and 77 K. (C) 2003 American Institute of Physics.
      Keywords
      Gaas
      Permalink
      http://hdl.handle.net/11693/11282
      Published Version (Please cite this version)
      http://dx.doi.org/ 10.1063/1.1576914
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      • Department of Physics 2397
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