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dc.contributor.authorPintilie, L.en_US
dc.contributor.authorPentia, E.en_US
dc.contributor.authorMatei, I.en_US
dc.contributor.authorPintilie, I.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2015-07-28T11:57:06Z
dc.date.available2015-07-28T11:57:06Z
dc.date.issued2002-05-01en_US
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/11693/11214
dc.description.abstractLead sulfide (PbS) thin films were deposited from a chemical bath onto SiO2/Si (n-type) substrates. Pseudo-metal-oxide-semiconductor devices were obtained by evaporating source and drain gold electrodes on a PbS surface and aluminum gate electrode on a Si substrate. Field-effect-assisted photoconductivity in the PbS layer was investigated at room temperature, in the 800-2700-nm-wavelength domain for different values and polarities of the drain and gate voltages. The best results were obtained for a positive gate, when both semiconductors are in depletion. An enhancement of about 25% of the photoconductive signal is obtained compared with the case when the gate electrode is absent or is not used. A simple model is proposed that explains the behavior of the dark current and photoconductive signal in PbS film with changing the gate voltage. (C) 2002 American Institute of Physics.en_US
dc.language.isoEnglishen_US
dc.source.titleJournal of Applied Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.1468277en_US
dc.subjectThin-filmsen_US
dc.subjectGrowthen_US
dc.titleField-effect-assisted photoconductivity in PbS films deposited on silicon dioxideen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage5782en_US
dc.citation.epage5782en_US
dc.citation.volumeNumber91en_US
dc.citation.issueNumber9en_US
dc.identifier.doi10.1063/1.1468277en_US
dc.publisherAmerican Institute of Physicsen_US
dc.contributor.bilkentauthorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828en_US


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