InGaAs-based high-performance p-I-n photodiodes
Unlu, M. S.
IEEE Photonics Technology Letters
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Kimukin, I., Biyikli, N., Butun, B., Aytur, O., Ünlü, S. M., & Ozbay, E. (2002). InGaAs-based high-performance pin photodiodes. Photonics Technology Letters, IEEE, 14(3), 366-368.
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/11201
In this letter, we have designed, fabricated, and characterized high-speed and high-efficiency InGaAs-based p-i-n photodetectors with a resonant cavity enhanced structure. The devices were fabricated by a microwave-compatible process. By using a postprocess recess etch, we tuned the resonance wavelength from 1605 to 1558 nm while keeping the peak efficiencies above 60%. The maximum quantum efficiency was 66% at 1572 nm which was in good agreement with our theoretical calculations. The photodiode had a linear response up to 6-mW optical power, where we obtained 5-mA photocurrent at 3-V reverse bias. The photodetector had a temporal response of 16 ps at 7-V bias. After system response deconvolution, the 3-dB bandwidth of the device was 31 GHz, which corresponds to a bandwidth-efficiency product of 20 GHz.