InGaAs-based high-performance p-i-n photodiodes
Date
2002-03Source Title
IEEE Photonics Technology Letters
Print ISSN
1041-1135
Publisher
IEEE
Volume
14
Issue
3
Pages
366 - 368
Language
English
Type
ArticleItem Usage Stats
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Abstract
In this letter, we have designed, fabricated, and characterized high-speed and high efficiency InGaAs-based p-i-n photodetectors with a resonant cavity enhanced structure. The
devices were fabricated by a microwave-compatible process. By
using a postprocess recess etch, we tuned the resonance wavelength
from 1605 to 1558 nm while keeping the peak efficiencies above 60%. The maximum quantum efficiency was 66% at 1572 nm which was in good agreement with our theoretical calculations. The photodiode had a linear response up to 6-mW optical power,
where we obtained 5-mA photocurrent at 3-V reverse bias. The photodetector had a temporal response of 16 ps at 7-V bias. After system response deconvolution, the 3-dB bandwidth of the device was 31 GHz, which corresponds to a bandwidth-efficiency product of 20 GHz.
Keywords
Bandwidth-efficiencyHigh Speed
P-i-n Photodiode
Photodetector
Resonant Cavity Enhanced
Deconvolution
Bandwidth
Cavity Resonators
Microwaves
Photocurrents
Quantum Efficiency
Semiconducting Indium Gallium Arsenide
Photodiodes