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      InGaAs-based high-performance p-i-n photodiodes

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      Author
      Kimukin, I.
      Bıyıklı, Necmi
      Butun, B.
      Aytur, O.
      Ünlü, S. M.
      Özbay, Ekmel
      Date
      2002-03
      Source Title
      IEEE Photonics Technology Letters
      Print ISSN
      1041-1135
      Publisher
      IEEE
      Volume
      14
      Issue
      3
      Pages
      366 - 368
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      In this letter, we have designed, fabricated, and characterized high-speed and high efficiency InGaAs-based p-i-n photodetectors with a resonant cavity enhanced structure. The devices were fabricated by a microwave-compatible process. By using a postprocess recess etch, we tuned the resonance wavelength from 1605 to 1558 nm while keeping the peak efficiencies above 60%. The maximum quantum efficiency was 66% at 1572 nm which was in good agreement with our theoretical calculations. The photodiode had a linear response up to 6-mW optical power, where we obtained 5-mA photocurrent at 3-V reverse bias. The photodetector had a temporal response of 16 ps at 7-V bias. After system response deconvolution, the 3-dB bandwidth of the device was 31 GHz, which corresponds to a bandwidth-efficiency product of 20 GHz.
      Keywords
      Bandwidth-efficiency
      High Speed
      P-i-n Photodiode
      Photodetector
      Resonant Cavity Enhanced
      Deconvolution
      Bandwidth
      Cavity Resonators
      Microwaves
      Photocurrents
      Quantum Efficiency
      Semiconducting Indium Gallium Arsenide
      Photodiodes
      Permalink
      http://hdl.handle.net/11693/11201
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/68.986815
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
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