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      Design and robustness improvement of high-performance LNA using 0.15 μm GaN technology for X-band applications

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      Author(s)
      Zafar, Salahuddin
      Çankaya Akoğlu, Büşra
      Aras, Erdem
      Yılmaz, Doğan
      Nawaz, Muhammad İmran
      Kashif, Ahsanullah
      Özbay, Ekmel
      Date
      2022-07
      Source Title
      International Journal of Circuit Theory and Applications
      Print ISSN
      0098-9886
      Publisher
      John Wiley & Sons Ltd.
      Volume
      50
      Issue
      7
      Pages
      2305 - 2319
      Language
      English
      Type
      Article
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      Abstract
      In this paper, we present a highly robust GaN-based X-band low-noise amplifier (LNA) showing promising small-signal and noise performance as well as good linearity. The LNA is fabricated using in-house 0.15 μm AlGaN/GaN on a SiC HEMT process. Owing to the optimum choice of HEMT topologies and simultaneous matching technique, LNA achieves a noise figure better than 2 dB, output power at 1 dB gain compression higher than 19 dB, input and output reflection coefficients better than −9 and −11 dB, respectively. The small-signal gain of LNA is more than 19 dB for the whole band, and NF has a minimum of 1.74 dB at 10.2 GHz. LNA obtains an OIP3 up to 34.2 dBm and survives input power as high as 42 dBm. Survivability is investigated in terms of gain compression and forward gate current. Reverse recovery time (RRT), a crucial parameter for radar front-ends, is explored with respect to the RC time constant and trap phenomenon. The analysis shows that the significant contribution in RRT is due to traps while the RC time constant is in the nanoseconds range. Moreover, this study also addresses the requirement and choice of a DC gate feed resistor for the subsequent stages in a multi-stage design. The size of the designed LNA chip is 3 mm (Formula presented.) 1.2 mm only.
      Keywords
      Gain compression
      GaN-on-SiC
      Gate turn-on
      Low-noise amplifier
      Reverse recovery time
      Survivability
      Permalink
      http://hdl.handle.net/11693/111962
      Published Version (Please cite this version)
      https://dx.doi.org/10.1002/cta.3286
      Collections
      • Department of Electrical and Electronics Engineering 4011
      • Department of Physics 2550
      • Institute of Materials Science and Nanotechnology (UNAM) 2258
      • Nanotechnology Research Center (NANOTAM) 1179
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