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      48 W continuous-wave output from a high- efficiency single emitter laser diode at 915 nm

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      Author(s)
      Liu, Y.
      Yang, G.
      Zhao, Y.
      Tang, S.
      Lan, Y.
      Zhao, Y.
      Demir, Abdullah
      Date
      2022-09-19
      Source Title
      IEEE Photonics Technology Letters
      Print ISSN
      1041-1135
      Electronic ISSN
      1941-0174
      Publisher
      Institute of Electrical and Electronics Engineers
      Volume
      34
      Issue
      22
      Pages
      1218 - 1221
      Language
      English
      Type
      Article
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      Abstract
      Improving the power and efficiency of 9xx-nm broad-area laser diodes has a great help in reducing the cost of laser systems and expanding applications. This letter presents an optimized epitaxial structure with high power and conversion efficiency. Laser diodes with 230 μm emitter width and 5 mm cavity length deliver continuous-wave output power up to 48.5 W at 48 A, 30 °C, the highest power reported for 9xx-nm single emitter lasers so far. The slope efficiency is as high as 1.23 W/A due to a low internal optical loss of 0.31 cm−1 and a high internal efficiency of 96%. The maximum power conversion efficiency reaches 72.6% at 15.3 W and 67.3% at the operating power of 30 W under a heatsink temperature of 25 °C. Life test results show no failure in 1000 hours for 55 laser diodes.
      Keywords
      Semiconductor laser
      Laser diode
      High power
      15 high efficiency
      915 nm
      Permalink
      http://hdl.handle.net/11693/111931
      Published Version (Please cite this version)
      https://doi.org/10.1109/LPT.2022.3207786
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      • Institute of Materials Science and Nanotechnology (UNAM) 2258
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