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dc.contributor.authorGökkavas, M.en_US
dc.contributor.authorDosunmu, O.en_US
dc.contributor.authorÜnlü, M. S.en_US
dc.contributor.authorUlu, G.en_US
dc.contributor.authorMirin, R. P.en_US
dc.contributor.authorChristensen, D. H.en_US
dc.contributor.authorÖzbay, E.en_US
dc.date.accessioned2015-07-28T11:57:04Z
dc.date.available2015-07-28T11:57:04Z
dc.date.issued2001en_US
dc.identifier.issn1041-1135
dc.identifier.urihttp://hdl.handle.net/11693/11191
dc.description.abstractIn this letter, we report AlGaAs–GaAs p-i-n photodiodes with a 3-dB bandwidth in excess of 10 GHz for devices as large as 60- m diameter. Resonant cavity enhanced photodetection is employed to improve quantum efficiency, resulting in more than 90% peak quantum efficiency at 850 nm.en_US
dc.language.isoEnglishen_US
dc.source.titleIEEE Photonics Technology Lettersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/68.969904en_US
dc.subjectHigh-speed optoelectronicsen_US
dc.subjectPhotodetectorsen_US
dc.subjectPhotodiodesen_US
dc.subjectPin diodesen_US
dc.titleHigh-speed high-efficiency large-area resonant cavity enhanced p-i-n photodiodes for multimode fiber communicationsen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage1349en_US
dc.citation.epage1351en_US
dc.citation.volumeNumber13en_US
dc.citation.issueNumber12en_US
dc.identifier.doi10.1109/68.969904en_US
dc.publisherIEEEen_US


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