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dc.contributor.authorGokkavas, M.en_US
dc.contributor.authorDostunmu, O.en_US
dc.contributor.authorUnlu, M. S.en_US
dc.contributor.authorUlu, G.en_US
dc.contributor.authorMirin, R. P.en_US
dc.contributor.authorChristensen, D. H.en_US
dc.contributor.authorOzbay, E.en_US
dc.date.accessioned2015/07/28en_US
dc.date.accessioned2015-07-28T11:57:04Z
dc.date.available2015-07-28T11:57:04Z
dc.date.issued2001en_US
dc.identifier.citationGokkavas, M., Dosunmu, O., Unlu, M. S., Ulu, G., Mirin, R. P., Christensen, D. H., & Ozbay, E. (2001). High-speed high-efficiency large-area resonant cavity enhanced pin photodiodes for multimode fiber communications. BOSTON UNIV MA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING.en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://hdl.handle.net/11693/11191
dc.descriptionCataloged from PDF version of article.en_US
dc.description.abstractIn this letter, we report AlGaAs–GaAs p-i-n photodiodes with a 3-dB bandwidth in excess of 10 GHz for devices as large as 60- m diameter. Resonant cavity enhanced photodetection is employed to improve quantum efficiency, resulting in more than 90% peak quantum efficiency at 850 nm.en_US
dc.language.isoEnglishen_US
dc.source.titleIEEE Photonics Technology Lettersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/68.969904en_US
dc.rightsCopyright © 2001 IEEEen_US
dc.subjectHigh-speed Optoelectronicsen_US
dc.subjectPhotodetectorsen_US
dc.subjectPhotodiodes, Resonant Cavityen_US
dc.subjectPin Diodesen_US
dc.titleHigh-Speed High Effiency Large Area Resonant Cavity Enhanced p-I-n Photodiodes for Multimode Fiber Communicationsen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.citation.spage1205en_US
dc.citation.epage1205en_US
dc.citation.volumeNumber13en_US
dc.citation.issueNumber12en_US
dc.identifier.doi10.1109/68.969904en_US
dc.publisherIEEEen_US


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