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      A ring gyroscope with on-chip capacitive stress compensation

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      Author(s)
      Uzunoğlu, Baha Erim
      Erkan, Derin
      Tatar, Erdinç
      Date
      2022-08-18
      Source Title
      Journal of Microelectromechanical Systems
      Print ISSN
      1057-7157
      Electronic ISSN
      1941-0158
      Publisher
      Institute of Electrical and Electronics Engineers
      Volume
      31
      Issue
      5
      Pages
      741 - 752
      Language
      English
      Type
      Article
      Item Usage Stats
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      11
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      Abstract
      We present long-term stress compensation results for a 3.2mm diameter ring gyroscope integrated with 16 capacitive stress sensors for the first time in this work. A bridge-type capacitive sensor is preferred due to its compact size and temperature insensitivity for on-chip stress measurements. The ring design enables a high level of integration and stress sensor-gyroscope output correlation. We first demonstrate the stress sensor operation on a stress test-bed. The drift test for sixteen days at mismatched mode and the drift test for eight days at matched mode in room temperature reveal that the stress compensation can eliminate the gyroscope drift. The stability of the stress compensated gyroscope output can reach 0.008°/h in mismatched mode and 0.003°/h in matched mode at an averaging time of two days with no signs of long-term drift. High gyroscope stability is achieved with a partial least-squares fitting algorithm; however, we believe that stress and gyroscope output relation might be linear time-variant with possible nonlinear and hysteresis effects. Analysis of the drive and sense mode frequencies shows that only temperature cannot explain the frequency variations, and the inclusion of stress can comprehensively describe the frequency changes.
      Keywords
      MEMS inertial sensors
      Ring gyroscope
      Stress sensor
      Drift
      Stress compensation
      Permalink
      http://hdl.handle.net/11693/111901
      Published Version (Please cite this version)
      https://doi.org/10.1109/JMEMS.2022.3197341
      Collections
      • Department of Electrical and Electronics Engineering 4011
      • Institute of Materials Science and Nanotechnology (UNAM) 2258
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