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      Epitaxially-stacked high efficiency laser diodes near 905 nm

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      Author(s)
      Zhao, Yuliang
      Yang, Guowen
      Zhao, Yongming
      Tang, Song
      Lan, Yu
      Liu, Yuxian
      Wang, Zhenfu
      Demir, Abdullah
      Date
      2022-12-01
      Source Title
      IEEE Photonics Journal
      Print ISSN
      19430655
      Publisher
      Institute of Electrical and Electronics Engineers Inc.
      Volume
      14
      Issue
      6
      Pages
      1 - 6
      Language
      English
      Type
      Article
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      Abstract
      We report on studying tunnel junctions and an optical cavity structure for developing epitaxially-stacked high-efficiency 905 nm high-power laser diodes. The GaAs tunnel junctions were explored via simulations and experiments to realize a high peak current density of 7.7 × 104 A/cm2 and a low specific resistance of 1.5 × 10-5 Ωcm2 with a high n-doping concentration of 6 × 1019 cm-3. Employing a low-loss epitaxial structure design, single-, double-, and triple-cavity structure laser diodes demonstrated power scaling by epitaxial stacking. Triple-cavity laser diodes have a low optical loss (0.42 cm-1) and generate a peak power of 83 W with a short cavity length of 750 μm at a limited current of 30 A. © 2009-2012 IEEE.
      Keywords
      Epitaxial stacking
      High efficiency
      Laser diode
      Low optical loss
      N-doping concentration
      Power scaling
      Specific resistance
      Tunnel junction
      Permalink
      http://hdl.handle.net/11693/111867
      Published Version (Please cite this version)
      https://dx.doi.org/10.1109/JPHOT.2022.3211964
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