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      The effect of post-metal annealing on DC and RF performance of AlGaN/GaN HEMT

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      Author(s)
      Akoğlu, Büşra Çankaya
      Yılmaz, Doğan
      Salkım, Gurur
      Özbay, Ekmel
      Date
      2022-12-15
      Source Title
      Engineering Research Express
      Electronic ISSN
      2631-8695
      Publisher
      Institute of Physics Publishing Ltd.
      Volume
      4
      Issue
      4
      Pages
      1 - 8
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      The effects of gate post-metal annealing (PMA) on the DC and RF characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) were investigated. The unannealed and post gate-metal annealed AlGaN/GaN HEMTs were fully fabricated using NANOTAM's 0.5 μm gate length technology. PMA was performed at 450 °C for 10 min in nitrogen ambient for one of the wafers. The main focus was the effect of PMA on the electrical performance of HEMTs, including gate resistivity, transconductance, small-signal gain, output power (Pout), and threshold voltage (Vth) shift. It is achieved that HEMT with PMA has a gain of 18.5 dB, while HEMT without PMA shows a small-signal gain of 21.8 dB, as the PMA process increases the gate resistance (Rg) and decreases the transconductance (gm). The large-signal performance of the sample with PMA is better than the one without PMA, having an increase of 1.4 W/mm in Pout from 20.9 W to 24.4 W. The transistor with PMA also demonstrates a reliable gate performance and stable Vth, and the wafer exhibits better uniformity.
      Keywords
      AlGaN/GaN HEMT
      Post-metal annealing
      Gate Schottky quality
      Vth shift
      DC and RF performance
      Permalink
      http://hdl.handle.net/11693/111790
      Published Version (Please cite this version)
      https://doi.org/10.1088/2631-8695/aca95f
      Collections
      • Department of Electrical and Electronics Engineering 4011
      • Institute of Materials Science and Nanotechnology (UNAM) 2258
      • Nanotechnology Research Center (NANOTAM) 1179
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