• About
  • Policies
  • What is open access
  • Library
  • Contact
Advanced search
      View Item 
      •   BUIR Home
      • Scholarly Publications
      • Nanotechnology Research Center (NANOTAM)
      • View Item
      •   BUIR Home
      • Scholarly Publications
      • Nanotechnology Research Center (NANOTAM)
      • View Item
      JavaScript is disabled for your browser. Some features of this site may not work without it.

      Unveiling Tmax inside GaN HEMT based X-band low-noise amplifier by correlating thermal simulations and IR thermographic measurements

      Thumbnail
      View / Download
      7.5 Mb
      Author(s)
      Zafar, Salahuddin
      Durna, Yılmaz
      Koçer, Hasan
      Akoğlu, Büşra Çankaya
      Aras, Yunus Erdem
      Odabaşı, Oğuz
      Bütün, Bayram
      Özbay, Ekmel
      Date
      2022-12-20
      Source Title
      IEEE Transactions on Device and Materials Reliability
      Print ISSN
      1530-4388
      Publisher
      IEEE
      Volume
      14
      Issue
      8
      Pages
      1 - 8
      Language
      English
      Type
      Article
      Item Usage Stats
      20
      views
      14
      downloads
      Abstract
      This paper presents a method to reveal the channel temperature profile of high electron mobility transistors (HEMTs) in a multi-stage monolithic microwave integrated circuit (MMIC). The device used for this study is a two-stage X-band low-noise amplifier fabricated using 0.15 m GaN-on-SiC technology with 4x50 m and 4x75 m HEMTs at the first and the second stage, respectively. The surface temperature measured through infrared (IR) thermography has a diffraction-limited resolution. Moreover, it is impossible to measure sub-surface Tmax residing inside the two-dimensional electron gas of HEMT using IR thermographic measurements. Finite element analysis (FEA) thermal simulations are performed in this study to acquire the surface and sub-surface temperature profiles of the whole MMIC. IR measurements and FEA simulations are integrated through a correlation-based method verifying the accuracy of the FEA-based temperature profiles. This method leads to accurately finding the hotspots in the MMIC, thus revealing the Tmax of both stages. The correlation method using two filters approach to match the measurements and simulated temperature profiles of all the stages finds its application in MMICs’ high-temperature operating lifetime reliability tests.
      Keywords
      IR imaging
      Finite element analysis
      Low-noise amplifier
      HEMT
      MMIC
      Permalink
      http://hdl.handle.net/11693/111380
      Published Version (Please cite this version)
      https://www.doi.org/10.1109/TDMR.2022.3230646
      Collections
      • Department of Electrical and Electronics Engineering 4011
      • Department of Physics 2550
      • Institute of Materials Science and Nanotechnology (UNAM) 2258
      • Nanotechnology Research Center (NANOTAM) 1179
      Show full item record

      Browse

      All of BUIRCommunities & CollectionsTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartmentsCoursesThis CollectionTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartmentsCourses

      My Account

      Login

      Statistics

      View Usage StatisticsView Google Analytics Statistics

      Bilkent University

      If you have trouble accessing this page and need to request an alternate format, contact the site administrator. Phone: (312) 290 2976
      © Bilkent University - Library IT

      Contact Us | Send Feedback | Off-Campus Access | Admin | Privacy