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      Plasma-enhanced atomic layer deposition of amorphous Ga2O3 gate dielectrics

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      Embargo Lift Date: 2024-08-30
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      Author(s)
      Badali, Y.
      Arslan, Engin
      Ulusoy Ghobadi, Turkan Gamze
      Ozbay, Ekmel
      Ozcelik, S.
      Date
      2022-08-30
      Source Title
      Journal of Physics and Chemistry of Solids
      Print ISSN
      0022-3697
      Electronic ISSN
      1879-2553
      Publisher
      Elsevier Ltd
      Volume
      170
      Pages
      110976- 1 - 110976- 8
      Language
      English
      Type
      Article
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      Abstract
      Amorphous gallium oxide (Ga2O3) thin films were investigated as gate dielectrics for electronic device applications using plasma-enhanced atomic layer deposition. The structural and morphological properties as well as the electrical and dielectric behaviors of Ga2O3 thin films were explored. The surface morphology of the amorphous Ga2O3 thin film was highly smooth with root mean square of 0.55 nm and low defect density, which were visible to atomic force microscopy. The grazing incidence X-ray diffraction pattern showed no discernible peak, indicating that the film was amorphous. The X-ray photoelectron spectroscopy depth-profiling analysis showed that the Ga/O ratio was 0.76, slightly more than the optimum 2/3 ratio (0.67). The temperature-dependent current–voltage characteristics of the Au/Ni/Ga2O3/p-Si structure revealed that ideality factor and barrier height values decreased and increased with increasing temperature, respectively, demonstrating their high temperature dependency. Regardless of the applied frequency, Ga2O3 thin films exhibited a good dielectric constant of about ∼9 at zero bias voltage. The comprehensive capacitance–voltage analysis showed low trap densities of about 1012 eV−1 cm−2 at the Ga2O3–p-Si interface.
      Keywords
      Atomic layer deposition
      Amorphous Ga2O3
      Dielectric properties
      Interface traps
      Permalink
      http://hdl.handle.net/11693/111253
      Published Version (Please cite this version)
      https://doi.org/10.1016/j.jpcs.2022.110976
      Collections
      • Department of Electrical and Electronics Engineering 4011
      • Department of Physics 2550
      • Nanotechnology Research Center (NANOTAM) 1179
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