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dc.contributor.authorGökkavas, M.en_US
dc.contributor.authorOnat, B. M.en_US
dc.contributor.authorÖzbay, E.en_US
dc.contributor.authorAta, E. P.en_US
dc.contributor.authorXu, J.en_US
dc.contributor.authorTowe, E.en_US
dc.contributor.authorÜnlü, M. S.en_US
dc.date.accessioned2015-07-28T11:56:53Z
dc.date.available2015-07-28T11:56:53Z
dc.date.issued1999-02en_US
dc.identifier.issn0018-9197
dc.identifier.urihttp://hdl.handle.net/11693/11115
dc.description.abstractResonant cavity enhanced (RCE) photodiodes (PD's) are promising candidates for applications in optical communications and interconnects where high-speed high-efficiency photodetection is desirable. In RCE structures, the electrical properties of the photodetector remain mostly unchanged; however, the presence of the microcavity causes wavelength selectivity accompanied by a drastic increase of the optical field at the resonant wavelengths. The enhanced optical field allows to maintain a high efficiency for faster transit-time limited PD's with thinner absorption regions. The combination of an RCE detection scheme with Schottky PD's allows for the fabrication of high-performance photodetectors with relatively simple material structures and fabrication processes. In top-illuminated RCE Schottky PD's, a semitransparent Schottky contact can also serve as the top reflector of the resonant cavity. We present theoretical and experimental results on spectral and high-speed properties of GaAs-AlAs-InGaAs RCE Schottky PD's designed for 900-nm wavelength.en_US
dc.language.isoEnglishen_US
dc.source.titleIEEE Journal of Quantum Electronicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/3.740742en_US
dc.subjectHigh-speed optoelectronicsen_US
dc.subjectPhotodetectorsen_US
dc.subjectPhotodiodesen_US
dc.subjectSchottky diodesen_US
dc.subjectResonant cavityen_US
dc.titleDesign and optimization of high-speed resonant cavity enhanced Schottky photodiodesen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.citation.spage208en_US
dc.citation.epage215en_US
dc.citation.volumeNumber35en_US
dc.citation.issueNumber2en_US
dc.identifier.doi10.1109/3.740742en_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US


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