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dc.contributor.authorBirer, O.en_US
dc.contributor.authorSayan, S.en_US
dc.contributor.authorSuzer, S.en_US
dc.contributor.authorAydinli, A.en_US
dc.date.accessioned2015-07-28T11:56:52Z
dc.date.available2015-07-28T11:56:52Z
dc.date.issued1999-05-04en_US
dc.identifier.issn0022-2860
dc.identifier.urihttp://hdl.handle.net/11693/11100
dc.description.abstractAngle-resolved XPS is used to determine the thickness and the uniformity of the chemical composition with respect to oxygen and nitrogen of the very thin silicon oxide and oxynitride overlayers grown on silicon. (C) 1999 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoEnglishen_US
dc.source.titleJournal of Molecular Structureen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/S0022-2860(98)00943-0en_US
dc.subjectAngle-resolved Xpsen_US
dc.subjectThickness Determinationen_US
dc.subjectSiliconoxynitridesen_US
dc.titleXPS investigation of thin SiOx and SiOxNy overlayersen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage611en_US
dc.citation.epage614en_US
dc.citation.volumeNumber481en_US
dc.citation.issueNumberSIen_US
dc.identifier.doi10.1016/S0022-2860(98)00943-0en_US
dc.publisherElsevieren_US


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