XPS investigation of thin SiOx and SiOxNy overlayers
Date
1999-05-04
Editor(s)
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
Journal of Molecular Structure
Print ISSN
0022-2860
Electronic ISSN
Publisher
Elsevier
Volume
481
Issue
SI
Pages
611 - 614
Language
English
Type
Journal Title
Journal ISSN
Volume Title
Series
Abstract
Angle-resolved XPS is used to determine the thickness and the uniformity of the chemical composition with respect to oxygen and nitrogen of the very thin silicon oxide and oxynitride overlayers grown on silicon. (C) 1999 Elsevier Science B.V. All rights reserved.