XPS investigation of thin SiOx and SiOxNy overlayers

Birer, O.; Sayan, S.; Süzer, Şefik; Aydınlı, Atilla

doi:10.1016/S0022-2860(98)00943-0

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Author

Birer, O.

Sayan, S.

Süzer, Şefik

Aydınlı, Atilla

Date

1999-05-04

Source Title

Journal of Molecular Structure

Print ISSN

0022-2860

Publisher

Elsevier

Volume

481

Issue

Pages

611 - 614

Language

English

Type

Article

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Abstract

Angle-resolved XPS is used to determine the thickness and the uniformity of the chemical composition with respect to oxygen and nitrogen of the very thin silicon oxide and oxynitride overlayers grown on silicon. (C) 1999 Elsevier Science B.V. All rights reserved.