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      Polar optical phonon scattering and negative Kromer-Esaki-Tsu differential conductivity in bulk GaN

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      Author(s)
      Bulutay, C.
      Ridley, B. K.
      Zakhleniuk, N. A.
      Date
      2001-09
      Source Title
      Journal of Crystal Growth
      Print ISSN
      0022-0248
      Publisher
      Elsevier
      Volume
      230
      Issue
      4-Mar
      Pages
      462 - 466
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      GaN is being considered as a viable alternative semiconductor for high-power solid-state electronics. This creates a demand for the characterization of the main scattering channel at high electric fields. The dominant scattering mechanism for carriers reaching high energies under the influence of very high electric fields is the polar optical phonon (POP) emission. To highlight the directional variations, we compute POP emission rates along high-symmetry directions for the zinc-blende and wurtzite crystal phases of GaN. Our treatment relies on the empirical pseudopotential energies and wave functions. The scattering rates are efficiently computed using the Lehmann-Taut Brillouin zone integration technique. For both crystal phases, we also consider the negative differential conductivity possibilities associated with the negative effective mass part of the band structure. (C) 2001 Elsevier Science B.V. All rights reserved.
      Keywords
      Computer Simulation
      Nitrides
      Semiconducting Iii-v Materials
      High Electron Mobility Transistors
      Permalink
      http://hdl.handle.net/11693/10959
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/S0022-0248(01)01283-0
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      • Department of Physics 2397
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