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dc.contributor.authorBiswas, R.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorHo, K. M.en_US
dc.date.accessioned2015-07-28T11:56:10Z
dc.date.available2015-07-28T11:56:10Z
dc.date.issued1996-09-03en_US
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/11693/10883
dc.description.abstractPeriodic layer‐by‐layer dielectric structures with full three‐dimensional photonic band gaps have been designed and fabricated. In contrast to previous layer‐by‐layer structures the rods in each successive layer are at an angle of 70.5° to each other, achieved by etching both sides of a silicon wafer. Photonic band‐structure calculations are utilized to optimize the photonic band gap by varying the structural geometry. The structure has been fabricated by double etching Si wafers producing millimeter wavephotonic band gaps between 300 and 500 GHz, in excellent agreement with band calculations. Overetching this structure produces a multiply connected geometry and increases both the size and frequency of the photonic band gap, in very good agreement with experimental measurements. This new robust double‐etched structure doubles the frequency possible from a single Si wafer, and can be scaled to produced band gaps at higher frequencies. © 1996 American Institute of Physicsen_US
dc.language.isoEnglishen_US
dc.source.titleJournal of Applied Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.363802en_US
dc.subjectChemical elementsen_US
dc.subjectDielectric propertiesen_US
dc.subjectElectronic bandstructureen_US
dc.subjectSemiconductorsen_US
dc.subjectRadio spectrumen_US
dc.subjectPhotonic crystalsen_US
dc.titlePhotonic band gaps with layer-by-layer double-etched structuresen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnologyen_US
dc.citation.spage6749en_US
dc.citation.epage6753en_US
dc.citation.volumeNumber80en_US
dc.citation.issueNumber12en_US
dc.identifier.doi10.1063/1.363802en_US
dc.publisherA I P Publishing LLCen_US
dc.contributor.bilkentauthorÖzbay, Ekmelen_US
dc.identifier.eissn1089-7550


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