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      Photonic band gaps with layer-by-layer double-etched structures

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      Author
      Biswas, R.
      Özbay, Ekmel
      Ho, K. M.
      Date
      1996-09-03
      Source Title
      Journal of Applied Physics
      Print ISSN
      0021-8979
      Electronic ISSN
      1089-7550
      Publisher
      A I P Publishing LLC
      Volume
      80
      Issue
      12
      Pages
      6749 - 6753
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      Periodic layer‐by‐layer dielectric structures with full three‐dimensional photonic band gaps have been designed and fabricated. In contrast to previous layer‐by‐layer structures the rods in each successive layer are at an angle of 70.5° to each other, achieved by etching both sides of a silicon wafer. Photonic band‐structure calculations are utilized to optimize the photonic band gap by varying the structural geometry. The structure has been fabricated by double etching Si wafers producing millimeter wavephotonic band gaps between 300 and 500 GHz, in excellent agreement with band calculations. Overetching this structure produces a multiply connected geometry and increases both the size and frequency of the photonic band gap, in very good agreement with experimental measurements. This new robust double‐etched structure doubles the frequency possible from a single Si wafer, and can be scaled to produced band gaps at higher frequencies. © 1996 American Institute of Physics
      Keywords
      Chemical elements
      Dielectric properties
      Electronic bandstructure
      Semiconductors
      Radio spectrum
      Photonic crystals
      Permalink
      http://hdl.handle.net/11693/10883
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.363802
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
      • Institute of Materials Science and Nanotechnology (UNAM) 1775
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