Browsing by Subject "Semiconductor devices"
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Item Open Access A 128-bit microprocessor compatible programmable correlator chip for use in synchronous communication(IEEE, 1989) Ungan, İ. Enis; Topçu, Satılmış; Atalar, AbdullahA single-chip microprocessor-compatible 128-b correlator is designed and implemented in a 3-μm M2CMOS process. Full-custom design techniques are applied to achieve the best tradeoff among chip size, speed, and power consumption. The chip is placed in a microprocessor-based portable data terminal using HF radio communication. It marks the beginning of a synchronous data stream received from the very noisy channel by detecing the synchronization (sync) word. The sync word can be detected for either inverted or noninverted input data streams. Two chips can be cascaded to make a 256-b correlator. The chip is fully programmable by a microprocessor to set the number of tolerable errors in detection and to select the bits of the 128-b (or 256-b) data stream to be used in the correlation.Item Open Access Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors(Institute of Physics Publishing, 2017) Bıyıklı, Necmi; Haider A.In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.Item Open Access Capacitance-conductance-current-voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures(Elsevier Ltd, 2015) Turut, A.; Karabulut, A.; Ejderha, K.; Bıyıklı, NecmiWe have studied the admittance and current–voltage characteristics of the Au/Ti/Al2O3/nGaAs structure. The Al2O3 layer of about 5 nm was formed on the n-GaAs by atomic layer deposition. The barrier height (BH) and ideality factor values of 1.18 eV and 2.45 were obtained from the forward-bias ln I vs V plot at 300 K. The BH value of 1.18 eV is larger than the values reported for conventional Ti/n-GaAs or Au/Ti/n-GaAs diodes. The barrier modification is very important in metal semiconductor devices. The use of an increased barrier diode as the gate can provide an adequate barrier height for FET operation while the decreased barrier diodes also show promise as small signal zero-bias rectifiers and microwave. The experimental capacitance and conductance characteristics were corrected by taking into account the device series resistance Rs. It has been seen that the noncorrection characteristics cause a serious error in the extraction of the interfacial properties. Furthermore, the device behaved more capacitive at the reverse bias voltage range rather than the forward bias voltage range because the phase angle in the reverse bias has remained unchanged as 901 independent of the measurement frequency.Item Open Access Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance(IEEE, 2016) Bosi G.; Raffo A.; Vadalà V.; Trevisan F.; Vannini G.; Cengiz, Ömer; Şen, Özlem; Özbay, EkmelIn this paper, we introduce the use of the low-frequency characterization of electron devices as an accurate and economical way to fast gather consistent data about the electron device performance at microwaves in the evaluation phase of new components, technologies and processes. © 2016 European Microwave Association.Item Open Access Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures(SPIE, 2014) Tekcan, B.; Ozgit Akgun, C.; Bolat, S.; Bıyıklı, Necmi; Okyay, Ali KemalProof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are demonstrated. Electrical and optical characteristics of the fabricated devices are investigated. Dark current values as low as 14 pA at a 30 V reverse bias are obtained. Fabricated devices exhibit a 15× UV/VIS rejection ratio based on photoresponsivity values at 200 nm (UV) and 390 nm (VIS) wavelengths. These devices can offer a promising alternative for flexible optoelectronics and the complementary metal oxide semiconductor integration of such devices. © 2014 Society of Photo-Optical Instrumentation Engineers (SPIE).Item Open Access Mn2+-doped CdSe/CdS core/multishell colloidal quantum wells enabling tunable carrier-dopant exchange interactions(American Chemical Society, 2015) Delikanlı, S.; Akgül, M. Z.; Murphy, J. R.; Barman, B.; Tsai, Y.; Scrace, T.; Zhang, P.; Bozok, B.; Hernández-Martínez, P.L.; Christodoulides, J.; Cartwright, A. N.; Petrou, A.; Demir, Hilmi VolkanIn this work, we report the manifestations of carrier-dopant exchange interactions in colloidal Mn2+-doped CdSe/CdS core/multishell quantum wells. The carrier-magnetic ion exchange interaction effects are tunable through wave function engineering. In our quantum well heterostructures, manganese was incorporated by growing a Cd0.985Mn0.015S monolayer shell on undoped CdSe nanoplatelets using the colloidal atomic layer deposition technique. Unlike previously synthesized Mn2+-doped colloidal nanostructures, the location of the Mn ions was controlled with atomic layer precision in our heterostructures. This is realized by controlling the spatial overlap between the carrier wave functions with the manganese ions by adjusting the location, composition, and number of the CdSe, Cd1-xMnxS, and CdS layers. The photoluminescence quantum yield of our magnetic heterostructures was found to be as high as 20% at room temperature with a narrow photoluminescence bandwidth of ∼22 nm. Our colloidal quantum wells, which exhibit magneto-optical properties analogous to those of epitaxially grown quantum wells, offer new opportunities for solution-processed spin-based semiconductor devices. © 2015 American Chemical Society.Item Open Access Photovoltaic nanocrystal scintillators hybridized on Si solar cells for enhanced conversion efficiency in UV(Optical Society of American (OSA), 2008) Mutlugun, E.; Soganci I.M.; Demir, Hilmi VolkanWe propose and demonstrate semiconductor nanocrystal based photovoltaic scintillators integrated on solar cells to enhance photovoltaic device parameters including spectral responsivity, open circuit voltage, short circuit current, fill factor, and solar conversion efficiency in the ultraviolet. Hybridizing (CdSe)ZnS core-shell quantum dots of 2.4 nm in diameter on multi-crystalline Si solar cells for the first time, we show that the solar conversion efficiency is enhanced 2 folds under white light illumination similar to the solar spectrum. Such nanocrystal scintillators provide the ability to extend the photovoltaic activity towards UV. © 2008 Optical Society of America.Item Open Access Quantum mechanical simulation of charge transport in very small semiconductor structures(IEEE, 1989) Yalabik, M. C.; Diff, K.A quantum mechanical simulation method of charge transport in very small semiconductor devices, based on the numerical solution of the time-dependent Schrödinger equation (coupled self-consistently to the Poisson equation to determine the electrostatic potential in the device), is presented. Carrier transport is considered within the effective mass approximation, while the effects of the electron-phonon interaction are included in an approximation that is consistent with the results of the perturbation theory and gives the correct two-point time correlation function. Numerical results for the transient behavior of a planar ultrasubmicrometer three-dimensional GaAs MESFET (gate length of 26 nm) are also presented. They indicate that extremely fast gate-step response times (switching times) characterize such short-channel GaAs devices. © 1989 IEEEItem Open Access TiO2 assisted sensitivity enhancement in photosensitive nanocrystal skins(IEEE, 2014-10) Yeltik, Aydan; Akhavan, Shahab; Demir, Hilmi VolkanSolution-processable semiconductor nanocrystals (NCs) have been widely used to create novel devices for the photovoltaic, light-emission, light-detection and biosensing applications. They are good candidates especially to develope more efficient and novel optoelectronic devices owing to the high absorption cross-section, spectral tunability, deposition easiness and low cost properties. In recent years, NC integrated photodetectors have been developed to be used in large-area light-sensing applications [1]. These NC-based photodetectors have the ability to convert an optical signal to an electrical signal using the NCs as the optical absorbers. These low-cost devices were initially operated on the basis of charge collection, where an electric field imposed on the detector dissociates the photogenerated excitons into electrons and holes, in which an electric current is produced [2]. On the other hand, as an alternative device structure, we have recently developed the light-sensitive nanocrystal skin (LS-NS) [3]. These LS-NS platforms, which were fabricated over areas up to 48 cm2, are operated on the basis of photogenerated potential buildup, as opposed to conventional charge collection. In operation, close interaction of the monolayer NCs of the LS-NS with the top interfacing contact, while the bottom one is isolated using a high dielectric spacing layer, results in highly sensitive photosensing in the absence of external bias application. Furthermore, NC monolayer of the LS-NS makes the device semi-transparent with sufficient absorption, while reducing the noise generation and dark current. In our other recent work, we also reported that, by using a thick photoactive NC layer, a much lower photovoltage buildup was observed in the LS-NSs and it was attributed to the self-absorption effect [4]. In addition, we demonstrated the sensitivity increase in the LS-NSs via the absorption enhancement of NC film with the integration of plasmonic nanoparticles [5]. However, the localized plasmonic resonance band strongly limits the observed enhancement factor and the resultant operating wavelength range. Furthermore, in the absence of an external bias in the LS-NSs, each exciton tends to remain in the NC layer, where it was created, and recombine with the photogenerated holes that accumulate at the top interfacing contact, which causes also lower voltage buildup in the device. To overcome all these problems, in this study, we propose a thin TiO2 layer as the electron-accepting material and demonstrate the first account of electron transfer in NC-based light-sensitive skins, which leads to significant broadband sensitivity enhancement in the active device architecture. Here, we prove that favorable conduction band offset aids in transferring photogenerated electrons from a monolayer of NCs to an electron-accepting layer, which is ultimately useful for photosensing platforms and the next generation of light-sensing NC devices. © 2014 IEEE.