Browsing by Subject "Semiconductor device manufacture"
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Item Open Access 1.3 μm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector(IEEE, Piscataway, NJ, United States, 2000) Necmi, B.; Kimukin, I.; Özbay, Ekmel; Tuttle, G.GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism were fabricated. Quantum efficiency (QE) was increased using resonant cavity enhancement (RCE) effect.Item Open Access Design considerations for MMIC distributed amplifiers(IEEE, 1994) Ergun, Şanlı; Atalar, AbdullahThe bandwidth of the input artificial line in a distributed amplifier is the main band limiting factor. By choosing this impedance properly the bandwidth of a distributed amplifier can be maximized. A four section GaAs MESFET distributed amplifier is designed using this strategy. The fabricated MMIC amplifier gives satisfactory performance. By adding proper length of series transmission lines in the drain side, the gain and the gain flatness of the amplifier can be further improved. This fact is presented via simulation results. The superior gain potential of cascode connected FETs is also demonstrated.Item Open Access Fabrication of high-speed resonant cavity enhanced schottky photodiodes(Institute of Electrical and Electronics Engineers, 1997-05) Özbay, Ekmel; Islam, M. S.; Onat, B.; Gökkavas, M.; Aytür, O.; Tuttle, G.; Towe, E.; Henderson, R. H.; Ünlü, M. S.We report the fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode. The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption region (In0.8Ga0.92As) and a distributed AlAs-GaAs Bragg mirror. The Schottky contact metal serves as a high-reflectivity top mirror in the RCE detector structure. The devices were fabricated by using a microwave-compatible fabrication process. The resulting spectral photo response had a resonance around 895 nm, in good agreement with our simulations. The full-width-at-half-maximum (FWHM) was 15 nm, and the enhancement factor was in excess of 6. The photodiode had an experimental setup limited temporal response of 18 ps FWHM, corresponding to a 3-dB bandwidth of 20 GHz.Item Open Access Filtering characteristics of hybrid integrated polymer and compound semiconductor waveguides(IEEE, 2002) Ozturk, C.; Huntington, A.; Aydınlı, Atilla; Byun, Y.T.; Dagli, N.This paper reports a study on a compact filter fabricated using hybrid integration of compound semiconductors and polymers. A GaAs epilayer is glued onto a polymer channel waveguide forming a highly asymmetrical directional coupler. This approach results in a narrow band filter due to very different dispersion characteristics of the compound semiconductor and the polymer materials. Furthermore, fiber coupling loss has been significantly reduced, since the input and output coupling is done through the polymer waveguide. Filtering characteristics can be engineered by changing the thickness and the length of the semiconductor epilayer. This can be done precisely using etch stop layers and noncritical lithography. The spectral response of such a filter can also be tuned electronically either using the electro-optic properties of the compound semiconductor or the thermo-optic properties of the polymer.Item Open Access Graphene field effect devices operating in differential circuit configuration(Elsevier, 2015) Nyffeler, C.; Hanay, M. S.; Sacchetto, D.; Leblebici, Y.We study the concept of a basic building block for circuits using differential signaling and being based on graphene field effect devices. We fabricated a number of top-gated graphene FETs using commercially available graphene and employing electron beam lithography along with other semiconductor manufacturing processes. These devices were then systematically measured in an automated setup and their DC characteristics analyzed in terms of a simple but effective analytical model. This model together with the collected data allowed us to proceed further with both mathematical analysis of circuit characteristics as well as numerical simulation in a dedicated circuit analysis software.Item Open Access High-speed widely-tunable >90% quantum-efficiency resonant cavity enhanced p-i-n photodiodes(IEEE, 1998) Bıyıklı, Necmi; Kimukin, İbrahim; Aytür, Orhan; Gökkavas, M.; Ulu, G.; Mirin, R.; Christensen, D. H.; Ünlü, M. S.; Özbay, EkmelWidely-tunable high-speed resonant cavity enhanced p-i-n photodiodes were designed, fabricated and tested for operation around 820 nm. The structure was grown by solid-source MBE on GaAs substrates and features high-reflectivity Bragg mirrors made of quarter-wave Al0.20Ga0.80As/AlAs stacks. Photoresponse and photospectral measurements were carried out. The tuning of the resonance wavelength within the Bragg mirror's upper and lower edges was observed. Quantum efficiency greater than 90% was demonstrated.Item Open Access Highly doped silicon micromachined photonic crystals(IEEE, Piscataway, NJ, United States, 2000) Temelkuran, B.; Bayındır, Mehmet; Özbay, Ekmel; Kavanaugh, J. P.; Sigalas, M. M.; Tuttle, G.Summary form only given. Photonic crystals are periodic structures with the property of reflecting the electromagnetic (EM) waves in all directions within a certain frequency range. These structures can be used to control and manipulate the behaviour of EM waves. Although earlier work concentrated on building these crystals with dielectric materials, there are certain advantages of introducing metals to photonic crystals. First, metals offer a high rejection rate when compared to the dielectric crystals. Second, for microwave applications, the dimensions of metallic crystals can be kept much smaller than the minimum dimensions needed for a typical dielectric crystal. In the paper, we propose a method for the fabrication of layer-by-layer metallic photonic crystals. A similar method had been used by Ozbay et al. to fabricate dielectric photonic crystals using silicon wafers. We fabricated a new layer-by-layer photonic crystal using highly doped silicon wafers.Item Open Access Optically implemented broadband blueshift switch in the terahertz regime(American Physical Society, 2011-01-18) Shen, N. H.; Massaouti, M.; Gokkavas, M.; Manceau J. M.; Özbay, Ekmel; Kafesaki, M.; Koschny, T.; Tzortzakis, S.; Soukoulis, C. M.We experimentally demonstrate, for the first time, an optically implemented blueshift tunable metamaterial in the terahertz (THz) regime. The design implies two potential resonance states, and the photoconductive semiconductor (silicon) settled in the critical region plays the role of intermediary for switching the resonator from mode 1 to mode 2. The observed tuning range of the fabricated device is as high as 26% (from 0.76 THz to 0.96 THz) through optical control to silicon. The realization of broadband blueshift tunable metamaterial offers opportunities for achieving switchable metamaterials with simultaneous redshift and blueshift tunability and cascade tunable devices. Our experimental approach is compatible with semiconductor technologies and can be used for other applications in the THz regime.Item Open Access Raman scattering from confined phonons in GaAs/AlGaAs quantum wires(Academic Press, 1998) Bairamov, B. H.; Aydınlı, Atilla; Tanatar, Bilal; Güven, K.; Gurevich, S.; Mel'tser, B. Ya.; Ivanov, S. V.; Kop'ev, P. S.; Smirnitskii, V. B.; Timofeev, F. N.We report on photoluminescence and Raman scattering performed at low temperature (T = 10 K) on GaAs/Al 0.3Ga 0.7As quantum-well wires with effective wire widths of L = 100.0 and 10.9 nm prepared by molecular beam epitaxial growth followed by holographic patterning, reactive ion etching, and anodic thinning. We find evidence for the existence of longitudinal optical phonon modes confined to the GaAs quantum wire. The observed frequency at ω L10 = 285.6 cm -1 for L = 11.0 nm is in good agreement with that calculated on the basis of the dispersive dielectric continuum theory of Enderlein† as applied to the GaAs/Al 0.3Ga 0.7As system. Our results indicate the high crystalline quality of the quantum-well wires fabricated using these techniques. © 1998 Academic Press.Item Open Access Strong coupling characterisation of quasi-1D polarons in cylindrical QW-wires(Pergamon Press, 1996) Erçelebi, A.; Senger, R. T.We retrieve, within the strong-coupling theory, the quasi-one dimensional analog of the standard optical polaron relevant to a cylindrical quantum well wire. Under the assumption of perfect confinement the ground state binding energy, effective polaronic mass and the phonon-coupling-induced potential well profiles are given as a function of the wire radius and the electron-phonon interaction strength.