Browsing by Subject "Photoresponsivity"
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Item Open Access Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures(SPIE, 2014) Tekcan, B.; Ozgit Akgun, C.; Bolat, S.; Bıyıklı, Necmi; Okyay, Ali KemalProof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are demonstrated. Electrical and optical characteristics of the fabricated devices are investigated. Dark current values as low as 14 pA at a 30 V reverse bias are obtained. Fabricated devices exhibit a 15× UV/VIS rejection ratio based on photoresponsivity values at 200 nm (UV) and 390 nm (VIS) wavelengths. These devices can offer a promising alternative for flexible optoelectronics and the complementary metal oxide semiconductor integration of such devices. © 2014 Society of Photo-Optical Instrumentation Engineers (SPIE).Item Open Access MIMIM photodetectors using plasmonically enhanced MIM absorbers(SPIE, 2017) Dereshgi, S. Abedini; Okyay, Ali KemalWe demonstrate super absorbing metal-insulator-metal (MIM) stacks and MIMIM photosensitive devices operating at visible and near-infrared (VIS-NIR) spectrum, where absorbing (top) MIM and photocollecting (bottom) MIM can be optimized separately. We investigate different bottom metals in absorbing MIM with nanoparticles realized by dewetting of silver thin film on top. While gold and silver have conventionally been considered the most appropriate plasmonic absorbers, we demonstrate different absorbing metals like aluminum and specifically chromium, with its plasma frequency happening at 850 nm, as more efficient layers for absorption. Absorption in chromium hits 82 percent around 1000 nm. We provide convincing evidences by doing reflection experiment and computational simulations for absorbing MIM part. We also suggest for the first time investigating electric loss tangent of metal or coherently, surface plasmon quality factor of absorbing metals which are reliable tools for engineering different metal layers. They reveal that despite the fact that gold and silver are good plasmonic scatterers in VIS-NIR and reliable absorbers in VIS region, they are not proper choices as absorbers for NIR applications. Once the most optimum absorbing design is pointed out, we integrate it on top of another metal-insulator to form an MIMIM photodetector with tunneling photocurrent path. The final optimized sample consisting of silver - hafnium oxide - chromium - aluminum oxide - silver nanoparticles (from bottom to top) has a dark current of 7nA and a photoresponsivity peak of 0.962 mA/W at 1000 nm and a full width at half maximum of 300 nm, while applied bias is 50 mV and device areas are 300 μm x 600 μm. This photoresponse shows 70 times enhancement compared to former reported spin coated rare nanoparticle MIMIMs.Item Open Access Nanosecond pulsed laser ablated sub-10 nm silicon nanoparticles for improving photovoltaic conversion efficiency of commercial solar cells(Institute of Physics Publishing Ltd., 2017) Rasouli, H. R.; Ghobadi, A.; Ghobadi, T. G. U.; Ates, H.; Topalli, K.; Okyay, Ali KemalIn this paper, we demonstrate the enhancement of photovoltaic (PV) solar cell efficiency using luminescent silicon nanoparticles (Si-NPs). Sub-10 nm Si-NPs are synthesized via pulsed laser ablation technique. These ultra-small Si nanoparticles exhibit photoluminescence (PL) character tics at 425 and 517 nm upon excitation by ultra-violet (UV) light. Therefore, they can act as secondary light sources that convert high energetic photons to ones at visible range. This down-shifting property can be a promising approach to enhance PV performance of the solar cell, regardless of its type. As proof-of-concept, polycrystalline commercial solar cells with an efficiency of ca 10% are coated with these luminescent Si-NPs. The nanoparticle-decorated solar cells exhibit up to 1.64% increase in the external quantum efficiency with respect to the uncoated reference cells. According to spectral photo-responsivity characterizations, the efficiency enhancement is stronger in wavelengths below 550 nm. As expected, this is attributed to down-shifting via Si-NPs, which is verified by their PL characteristics. The results presented here can serve as a beacon for future performance enhanced devices in a wide range of applications based on Si-NPs including PVs and LED applications.Item Open Access A near-infrared range photodetector based on indium nitride nanocrystals obtained through laser ablation(IEEE, 2014) Tekcan, B.; Alkis, S.; Alevli, M.; Dietz, N.; Ortac, B.; Bıyıklı, Necmi; Okyay, Ali KemalWe present a proof-of-concept photodetector that is sensitive in the near-infrared (NIR) range based on InN nanocrystals. Indium nitride nanocrystals (InN-NCs) are obtained through laser ablation of a high pressure chemical vapor deposition grown indium nitride thin film and are used as optically active absorption region. InN-NCs are sandwiched between thin insulating films to reduce the electrical leakage current. Under-1 V applied bias, the recorded photoresponsivity values within 600-1100-nm wavelength range are as high as (3.05 × 10-2) mA/W. An ultrathin layer of nanocrystalline InN thin film is, therefore, a promising candidate for NIR detection in large area schemes. © 2014 IEEE.Item Open Access Performance enhancement of GaN metal-semiconductor-metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO2 layer(AVS Science and Technology Society, 2015) Kumar, M.; Tekcan, B.; Okyay, Ali KemalThe authors demonstrate improved device performance of GaN metal-semiconductor-metal ultraviolet (UV) photodetectors (PDs) by ultrathin HfO2 (UT-HfO2) layer on GaN. The UT-HfO2 interfacial layer is grown by atomic layer deposition. The dark current of the PDs with UT-HfO2 is significantly reduced by more than two orders of magnitude compared to those without HfO2 insertion. The photoresponsivity at 360 nm is as high as 1.42 A/W biased at 5 V. An excellent improvement in the performance of the devices is ascribed to allowed electron injection through UT-HfO2 on GaN interface under UV illumination, resulting in the photocurrent gain with fast response time. © 2015 American Vacuum Society.Item Open Access Plasmonically enhanced ZnO thin-film-photo-transistor with dynamic responsivity control(IEEE, 2013) Özcan, Ayşe; Battal, Enes; Atar, Fatih Bilge; Okyay, Ali KemalWe fabricated an ZnO based thin-film photo-transistor with electrically tunable photo-responsivity operating in the UV and visible spectra and designed plasmonic structures enhancing the device performance up to 6 folds below the band-gap of ZnO. © 2013 IEEE.Item Open Access UV/vis range photodetectors based on thin film ALD grown ZnO/Si heterojunction diodes(IOP Publishing, 2013) Alkis, S.; Tekcan, B.; Nayfeh, A.; Okyay, Ali KemalWe present ultraviolet-visible (UV/vis) range photodetectors (PDs) based on thin film ZnO (n)/Si (p) heterojunction diodes. ZnO films are grown by the atomic layer deposition (ALD) technique at growth temperatures of 80, 150, 200 and 250 ° C. The fabricated ZnO (n)/Si (p) photodetectors (ZnO-Si-PDs) show good electrical rectification characteristics with ON/OFF ratios reaching up to 103. Under UV (350 nm wavelength) and visible (475 nm wavelength) light illumination, the ZnO-Si-PDs give photoresponsivity values of 30-37 mA W-1 and 74-80 mA W-1 at 0.5 V reverse bias, respectively. Photoluminescence (PL) spectra of ALD grown ZnO thin films are used to support the results.