Browsing by Subject "Monolithic microwave integrated circuits"
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Item Open Access Design of multi-octave band GaN-HEMT power amplifier(IEEE, 2012) Eren, Gulesin; Şen, Özlem A.; Bölükbaş, Basar; Kurt, Gökhan; Arıcan, Orkun; Cengiz, Ömer; Ünal, Sıla T.K.; Durmuş, Yıldırım; Özbay, EkmelThis paper describes design, fabrication and measurement of 6 GHz - 18 GHz monolithic microwave integrated circuit (MMIC) amplifier. The amplifier is realized as coplanar waveguide (CPW) circuit using 0.3 μm-gate Gallium-Nitride (GaN) HEMT technology. The amplifier has a small signal gain of 7 ± 0.75 dB. The output power at 3dB compression is better than 24 dBm with 16%-19% drain efficiency for the whole 6 GHz-18 GHz frequency band under continuous wave (CW) power. © 2012 IEEE.Item Open Access Efficient and accurate EM simulation technique for analysis and design of MMICs(John Wiley & Sons, Inc., 1997) Kınayman, N.; Aksun, M. I.A numerically efficient technique for the analysis and design of MMIC circuits is introduced and applied to some realistic problems. The formulation is based on the method of moments (MoM) in the spatial domain, and utilizes closed-form Green's functions. Incorporating the closed-form Green's functions into the MoM has resulted in an efficient and accurate CAD algorithm. This is because use of the closed-form Green's functions not only eliminates the calculation of the spatial-domain Green's functions, but also makes it possible to evaluate the MoM matrix elements analytically We have demonstrated the application of this method here for some stripline and microstrip geometries, and compared the results with those obtained from commercial EM software, em (Sonnet Software, Inc.)Item Open Access Efficient use of closed-form Green's functions for the analysis of planar geometries with vertical connections(Institute of Electrical and Electronics Engineers, 1997-05) Kınayman, N.; Aksun, M. I.An efficient and rigorous method for the analysis of planarly layered geometries with vertical metallizations is presented. The method is based on the use of the closed-form spatial-domain Green's functions in conjunction with the method of moments (MoM). It has already been demonstrated that the introduction of the closed-form Green's functions into the MoM formulation results in significant computational improvement for the analysis of planar geometries. However, in cases of vertical metallizations, such as shorting pin's, via holes, etc., there are some difficulties in incorporating the closed-form Green's functions into the MoM formulation. In this paper, these difficulties are discussed and their remedies are proposed. The proposed approach is compared to traditional approaches from a theoretical point of view, and the numerical implementation is demonstrated through some examples. The results are also compared to those obtained from the commercial software em by SONNET.Item Open Access Implementation of graphene multilayer electrodes in quantum dot light-emitting devices(Springer Verlag, 2015) Wolff, S.; Jansen, D.; Terlinden H.; Kelestemur, Y.; Mertin W.; Demir, Hilmi Volkan; Bacher G.; Nannen, E.Graphene is a highly attractive candidate for implementation as electrodes in next-generation large-area optoelectronic devices thanks to its high electrical conductivity and high optical transparency. In this study, we show all-solution-processed quantum dot-based light-emitting devices (QD-LEDs) using graphene mono- and multilayers as transparent electrodes. Here, the effect of the number of graphene layers (up to three) on the QD-LEDs performance was studied. While the implementation of a second graphene layer was found to reduce the turn-on voltage from 2.6 to 1.8 V, a third graphene layer was observed to increase the turn-on voltage again, which is attributed to an increased roughness of the graphene layer stack. © 2015, Springer-Verlag Berlin Heidelberg.Item Open Access Memristive behavior in a junctionless flash memory cell(American Institute of Physics Inc., 2015) Orak, I.; Ürel, M.; Bakan, G.; Dana, A.We report charge storage based memristive operation of a junctionless thin film flash memory cell when it is operated as a two terminal device by grounding the gate. Unlike memristors based on nanoionics, the presented device mode, which we refer to as the flashristor mode, potentially allows greater control over the memristive properties, allowing rational design. The mode is demonstrated using a depletion type n-channel ZnO transistor grown by atomic layer deposition (ALD), with HfO2 as the tunnel dielectric, AI2O3 as the control dielectric, and non-stoichiometric silicon nitride as the charge storage layer. The device exhibits the pinched hysteresis of a memristor and in the unoptimized device, R off/R on ratios of about 3 are presented with low operating voltages below 5 V. A simplified model predicts Roff/Ron ratios can be improved significantly by adjusting the native threshold voltage of the devices. The repeatability of the resistive switching is excellent and devices exhibit 106 s retention time, which can, in principle, be improved by engineering the gate stack and storage layer properties. The flashristor mode can find use in analog information processing applications, such as neuromorphic computing, where well-behaving and highly repeatable memristive properties are desirable.Item Open Access Temperature-dependence of a GaN-based HEMT monolithic X-band low noise amplifier(IEEE, 2004-10) Schwindt, R. S.; Kumar, V.; Aktaş, Ozan; Lee, J.-W.; Adesida, I.The temperature-dependent performance of a fully monolithic AlGaN/GaN HEMT-based X-band low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz at room temperature. The noise figure at 9.5 GHz increased from 2.5 dB at 43°C to 5.0 dB at 150°C. © 2004 IEEE.