Browsing by Subject "Laser annealing"
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Item Open Access Laser induced sponge-like Si in Si-rich oxides for photovoltaics(Optical Society of American (OSA), 2013) Gundogdu, S.; Sungur Ozen, E.; Hübner, R.; Heinig, K.H.; Aydınlı, AtillaWe show that a sponge-like structure of interconnected Si nanowires embedded in a dielectric matrix can be obtained by laser annealing of silicon rich oxides (SRO). Due to quantum confinement, the large bandgap displayed by these percolated nanostructures can be utilized as a tandem stage in 3rd generation thin-film solar cells. Well passivated by the SiO2 dielectric matrix, they are expected to overcome the difficulty of carrier separation encountered in the case of isolated crystalline quantum dots. In this study PECVD grown SRO were irradiated by a cw Ar+ laser. Raman spectroscopy has been used to assess the crystallinity of the Si nanostructures and thus to optimize the annealing conditions as dwell times and power densities. In addition, Si plasmon imaging in the transmission electron microscope was applied to identify the sponge-like structure of phase-separated silicon. © 2013 Optical Society of America.Item Open Access Raman studies of doped polycrystalline silicon from laser-annealed, doped a-Si:H(Pergamon Press, 1994) Compaan, A.; Savage, M. E.; Aydınlı, Atilla; Azfar, T.We have used Raman scattering to follow the progress of multiple-pulse (sub-melt-threshold) laser annealing in doped hydrogenated amorphous silicon films (a-Si:H) on glass. In phosphorous-doped a-Si:H the Raman signal shows that recrystallization begins with the first laser pulse but the multiple pulses are needed to generate the highest hole concentrations of ∼6×1020 cm-3. In boron-doped a-Si:H the electron concentration reaches ∼1×1021 cm-3 after laser anneal which produces a dip rather than a peak near the phonon line as a consequence of a negative Fano-interference parameter, q. The results show that Raman scattering can be used to obtain carrier concentrations in poly-silicon provided that wavelength-dependent Fano interference effects are properly included. © 1994.