Browsing by Subject "Infrared radiation"
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Item Open Access An analysis for the broad-band absorption enhancement using plasmonic structures on uncooled infrared detector pixels(SPIE, 2012-05) Lüleç, S. Z.; Küçük, S. E.; Battal, Enes; Okyay, Ali Kemal; Tanrıkulu, M. Y.; Akın, T.This paper introduces an analysis on the absorption enhancement in uncooled infrared pixels using resonant plasmon modes in metal structures, and it reports, for the first time in literature, broad-band absorption enhancement using integrated plasmonic structures in microbolometers for unpolarized long-wave IR detection. Different plasmonic structures are designed and simulated on a stack of layers, namely gold, polyimide, and silicon nitride in order to enhance absorption at the long-wave infrared. The simulated structures are fabricated, and the reflectance measurements are conducted using an FTIR Ellipsometer in the 8-12 μm wavelength range. Finite difference time domain (FDTD) simulations are compared to experimental measurement results. Computational and experimental results show similar spectral reflection trends, verifying broad-band absorption enhancement in the spectral range of interest. Moreover, this paper computationally investigates pixel-wise absorption enhancement by plasmonic structures integrated with microbolometer pixels using the FDTD method. Special attention is given during the design to be able to implement the integrated plasmonic structures with the microbolometers without a need to modify the pre-determined microbolometer process flow. The optimized structure with plasmonic layer absorbs 84 % of the unpolarized radiation in the 8-12 μm spectral range on the average, which is a 22 % increase compared to a reference structure with no plasmonic design. Further improvement may be possible by designing multiply coupled resonant structures.Item Open Access Atomic layer deposited Al 2O 3 passivation of type II InAs/GaSb superlattice photodetectors(AIP, 2012) Salihoğlu, Ömer; Muti, Abdullah; Kutluer, Kutlu; Tansel, T.; Turan, R.; Kocabaş, Coşkun; Aydınlı, AtillaTaking advantage of the favorable Gibbs free energies, atomic layer deposited (ALD) aluminum oxide (Al 2O 3) was used as a novel approach for passivation of type II InAs/GaSb superlattice (SL) midwave infrared (MWIR) single pixel photodetectors in a self cleaning process (λ cut-off ∼ 5.1 m). Al 2O 3 passivated and unpassivated diodes were compared for their electrical and optical performances. For passivated diodes, the dark current density was improved by an order of magnitude at 77 K. The zero bias responsivity and detectivity was 1.33 A/W and 1.9 × 10 13 Jones, respectively at 4μm and 77 K. Quantum efficiency (QE) was determined as 41 for these detectors. This conformal passivation technique is promising for focal plane array (FPA) applications. © 2012 American Institute of Physics.Item Open Access Broadband absorption enhancement in an uncooled microbolometer infrared detector(SPIE, 2014) Kebapcı, B.; Dervişoğlu, Ö.; Battal, Enes; Okyay, Ali Kemal; Akın, T.This paper introduces a method for a broadband absorption enhancement in the LWIR range (8-12 μm), in single layer microbolometer pixels with 35 μm pitch. For the first time in the literature, this study introduces a very simple and low cost approach to enhance the absorption by embedding plasmonic structures at the same level as the already existing metallic layer of a microbolometer pixel. The metal layer comprises the electrode and the arm structures on the body. Even though the periodicity of the plasmonic structures is slightly disturbed by the placement of the electrodes and the connecting metal, the metal arms and the electrodes compensate for the lack of the periodicity contributing to the resonance by their coupling with the individual plasmonic resonators. Various plasmonic structures are designed with FDTD simulations. Individual, plasmonically modified microbolometer pixels are fabricated, and an increase in the average absorption due to surface plasmon excitation at Au/Si3N4 interfaces is observed. Plasmonic structures increase the average absorption from 78% to 82% and result in an overall enhancement of 5.1%. A good agreement between the simulation and the FTIR measurement results are obtained within the LWIR range. This work paves the way for integration of the plasmonic structures within conventional microbolometer devices for performance enhancement without introducing additional costs.Item Open Access Compressive sensing based flame detection in infrared videos(IEEE, 2013) Günay, Osman; Çetin, A. EnisIn this paper, a Compressive Sensing based feature extraction algorithm is proposed for flame detection using infrared cameras. First, bright and moving regions in videos are detected. Then the videos are divided into spatio-temporal blocks and spatial and temporal feature vectors are exctracted from these blocks. Compressive Sensing is used to exctract spatial feature vectors. Compressed measurements are obtained by multiplying the pixels in the block with the sensing matrix. A new method is also developed to generate the sensing matrix. A random vector generated according to standard Gaussian distribution is passed through a wavelet transform and the resulting matrix is used as the sensing matrix. Temporal features are obtained from the vector that is formed from the difference of mean intensity values of the frames in two neighboring blocks. Spatial feature vectors are classified using Adaboost. Temporal feature vectors are classified using hidden Markov models. To reduce the computational cost only moving and bright regions are classified and classification is performed at specified intervals instead of every frame. © 2013 IEEE.Item Open Access Cumulant-based parametric multichannel FIR system identification methods(Elsevier, 1994) Özgen, M. T.; Alshebeili, S. A.; Çetin, A. Enis; Venetsanopoulos, A. N.In this paper, “least squares” and recursive methods for simultaneous identification of four nonminimum phase linear, time-invariant FIR systems are presented. The methods utilize the second- and fourth-order cumulants of outputs of the four FIR systems of which the common input is an independent, identically distributed (i.i.d.) non-Gaussian process. The new methods can be extended to the general problem of simultaneous identification of three or more FIR systems by choosing the order of the utilized cumulants to be equal to the number of systems. To illustrate the effectiveness of our methods, two simulation examples are included.Item Open Access Differentiation and localization of targets using infrared sensors(Elsevier, 2002) Aytaç, T.; Barshan, B.This study investigates the use of low-cost infrared emitters and detectors in the differentiation and localization of commonly encountered features or targets in indoor environments, such as planes, corners, edges, and cylinders. The intensity readings obtained with such systems are highly dependent on target location and properties in a way which cannot be represented in a simple manner, making the differentiation and localization process difficult. In this paper, we propose the use of angular intensity scans and present an algorithm to process them. This approach can determine the target type independent of its position. Once the target type is identified, its position can also be estimated. The method is verified experimentally. An average correct classification rate of 97% over all target types is achieved and targets are localized within absolute range and azimuth errors of 0.8 cm and 1.6°, respectively. The method demonstrated shows that simple infrared sensors, when coupled with appropriate processing, can be used to extract a significantly greater amount of information than that which they are commonly employed for.Item Open Access Effect of the passivation layer on the noise characteristics of mid-wave-infrared InAs / GaSb superlattice photodiodes(IEEE, 2012) Tansel, T.; Kutluer, K.; Salihoglu, Ö.; Aydınlı, Atilla; Aslan, B.; Arikan, B.; Kilinc, M. C.; Ergun, Y.; Serincan, U.; Turan, R.The authors describe the noise characterization of a mid-wavelength- infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation layers applied to the surface of the device. The MWIR InAs/GaSb SL design structure is based on p-i-n configuration grown by the molecular beam epitaxy on a (001) n-GaSb substrate. The SiO 2-passivated SL photodiodes demonstrated a Schottky-limited noise up to a bias voltage of -0.1 V where the measured peak responsivity is 1.37 A/W with a cut-off wavelength of 4.9 μm and the specific detectivity as high as 1.23 × 10 12 cm. Hz 1/2 W , demonstrating the high quality of the fabricated MWIR SL photodiodes. The noise measurements exhibited a frequency-dependent plateau (i.e., 1/f noise) for unpassivated and Si 3N 4-passivated samples, whereas 1/f-type noise suppression (i.e., frequency-independent plateau) with a noise current reduction at about 30 Hz of more than one order of magnitude was observed for the SiO 2-passivated ones.Item Open Access Electrical performance of InAs/AlSb/GaSb superlattice photodetectors(Academic Press, 2016) Tansel, T.; Hostut M.; Elagoz, S.; Kilic A.; Ergun, Y.; Aydınlı, AtillaTemperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification of dominant current mechanisms in each operating temperature can be used to extract minority carrier lifetimes which are highly important for understanding carrier transport and improving the detector performance. InAs/AlSb/GaSb based T2SL N-structures with AlSb unipolar barriers are designed for low dark current with high resistance and detectivity. Here we present electrical and optical performance of such N-structure photodetectors.Item Open Access High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers(SPIE, 2013) Ergun, Y.; Hostut, M.; Tansel, T.; Muti, bdullah; Kilic, A.; Turan, R.; Aydınlı, AtillaWe report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In this new design, AlSb layer in between InAs and GaSb layers acts as an electron barrier that pushes electron and hole wave functions towards the GaSb/InAs interface to perform strong overlap under reverse bias. Experimental results show that, with only 20 periods of intrinsic layers, dark current density and dynamic resistance at -50 mV bias are measured as 6×10-3 A/cm2 and 148 ωcm2 at 77K, respectively. Under zero bias, high spectral response of 1.2A/W is obtained at 5 μm with 50% cut-off wavelengths (λc) of 6 μm. With this new design, devices with only 146 nm thick i-regions exhibit a quantum efficiency of 42% at 3 μm with front-side illimunation and no anti-reflection coatings. © 2013 SPIE.Item Open Access High-efficiency low-crosstalk dielectric metasurfaces of mid-wave infrared focal plane arrays(American Institute of Physics Inc., 2017) Akın, O.; Demir, Hilmi VolkanHigh-resolution compact-size focal plane arrays (FPAs) suffer the fundamental geometrical tradeoff between the optical resolution (pixel size miniaturization) and the optical crosstalk (spillover of neighboring pixel focusing). For FPAs, our previously reported metallic metasurfaces reached an unprecedented level of crosstalk suppression. However, practical utilization of these metallic microlens arrays has proved to be intrinsically limited due to the low device efficiency (of the order of 0.10) resulting from the fundamental absorption losses of metals and their cross-polarization scheme. Exceeding this limit, here we show highly efficient microlens designs enabled by dielectric metasurfaces for mid-wave infrared (MWIR) operation. These dielectric MWIR FPAs allow for a substantially high device efficiency over 0.80 without compromising the optical crosstalk performance. Systematically studying dielectric nanoantennas of silicon nanodisks that do not dictate the cross-polarization scheme using full-wave solutions, we found that the optical crosstalk is suppressed to low levels ≤ 3.0% while sustaining the high efficiency. A figure-of-merit (FoM) defined for the device performance as the focusing efficiency per optical crosstalk times the f-number achieves 84, which is superior to all other types of MWIR FPAs reported to date, all falling below a maximum FoM of 70. These findings indicate that the proposed approach can pave the way for the practical usage of metasurface microlens arrays in MWIR.Item Open Access High-Speed InSb photodetectors on GaAs for mid-IR applications(IEEE, 2004) Kimukin, I.; Bıyıklı, Necmi; Kartaloǧlu, T.; Aytür, O.; Özbay, EkmelWe report p-i-n type InSb-based high-speed photodetectors grown on GaAs substrate. Electrical and optical properties of photodetectors with active areas ranging from 7.06 × 10 -6 cm 2 to 2.25 × 10 -4 cm 2 measured at 77 K and room temperature. Detectors had high zero-bias differential resistances, and the differential resistance area product was 4.5 Ω cm 2. At 77 K, spectral measurements yielded high responsivity between 3 and 5 μm with the cutoff wavelength of 5.33 μm. The maximum responsivity tor 80-μm diameter detectors was 1.00 × 10 5 V/W at 435 μm while the detectivity was 3.41×10 9 cm Hz 1/2/W. High-speed measurements were done at room temperature. An optical parametric oscillator was used to generate picosecond full-width at half-maximum pulses at 2.5 μm with the pump at 780 mm. 30-μm diameter photodetectors yielded 3-dB bandwidth of 8.5 GHz at 2.5 V bias.Item Open Access Hydrogenation of naphthalene and methylnaphthalene: modeling and spectroscopy(Elsevier BV, 2002) Sayan, Ş.; Paul, J.In situ infrared spectra of 1-methylnaphthalene (1-MeNapht)hydrogenation, over sulfided NiMo/Al2O3-TiO2 catalysts, were compared with theoretically derived properties of methylnaphthalene and its bicyclic products: MeDilin, MeTetralin, MeOctalin and MeDecalin, and with conversion data from literature. Comparisons were also made between the un-substituted and methyl-substituted two-rings, and between the 1- and 5-methyl isomers of 1,4-dihydronaphthalene (dilin) and 1,2,3,4-tetrahydronaphthalene (tetralin). IR spectra of MeNapht adsorption, on the sulfided catalyst, were matched with data for adsorption on the catalyst without sulfidation and the empty support. Surface bound MeNapht is observed below 250°C on all catalysts. MeNapht adsorption suppresses OH groups nondiscriminatory on the empty support and the metal loaded catalyst. We relate the results to previous data on the interaction between the supported metal sulfides and titanium modified aluminas. Calculated total energies, and experimentally derived heats of formation, pointed at decahydronaphthalene (decalin) as the dominant product of naphthalene hydrogenation, with tetralin as an abundant intermediate, and dilin and 1,2,3,4,5,6,7,8-octahydronaphthalene (octalin) as short lived transient stages. The spectroscopic modeling showed that the orbital fingerprints of the five bicyclic compounds were not distinctly different, nor more than marginally modified by methyl substitution or isomerization. The only significant difference came at the highest occupied orbital, where a high naphthalene density of states (DoS) overlapped with the valence bands of metal or metal sulfide catalysts. The vibrational bands for naphthalene, dilin, tetralin and octalin were well separated. Octalin and decalin, alone, have similar vibrational spectra. Upheaval of ring degeneracy for methyl-substituted two-ring structures broadened all infrared bands in a characteristic way.Item Open Access Idler-efficiency-enhanced long-wave infrared beam generation using aperiodic orientation-patterned GaAs gratings(Optical Society of America, 2016) Figen, Z. G.; Aytür, O.; Arıkan, OrhanIn this paper, we design aperiodic gratings based on orientation-patterned gallium arsenide (OP-GaAs) for converting 2.1 μm pump laser radiation into long-wave infrared (8-12 μm) in an idler-efficiency-enhanced scheme. These single OP-GaAs gratings placed in an optical parametric oscillator (OPO) or an optical parametric generator (OPG) can simultaneously phase match two optical parametric amplification (OPA) processes, OPA 1 and OPA 2. We use two design methods that allow simultaneous phase matching of two arbitrary χ 2 processes and also free adjustment of their relative strength. The first aperiodic grating design method (Method 1) relies on generating a grating structure that has domain walls located at the zeros of the summation of two cosine functions, each of which has a spatial frequency that equals one of the phase-mismatch terms of the two processes. Some of the domain walls are discarded considering the minimum domain length that is achievable in the production process. In this paper, we propose a second design method (Method 2) that relies on discretizing the crystal length with sample lengths that are much smaller than the minimum domain length and testing each sample's contribution in such a way that the sign of the nonlinearity maximizes the magnitude sum of the real and imaginary parts of the Fourier transform of the grating function at the relevant phase mismatches. Method 2 produces a similar performance as Method 1 in terms of the maximization of the height of either Fourier peak located at the relevant phase mismatch while allowing an adjustable relative height for the two peaks. To our knowledge, this is the first time that aperiodic OP-GaAs gratings have been proposed for efficient long-wave infrared beam generation based on simultaneous phase matching.Item Open Access İnsan hareketlerinin PIR-sensör tabanlı bir sistemle sınıflandırılması(IEEE, 2008-04) Urfalıoğlu, Onay; Soyer, Emin B.; Töreyin, B. Uğur; Çetin, A. EnisBu bildiride, tek bir pasif kızılberisi sensörü (PIR) kullanarak beş farklı insan hareketi ve bir hareketsiz arkaplan gürültüsünden oluşan toplam 6 çeşit olay için bir sınıflandırma yöntemi önerilmiştir. Otomatik olay sınıflandırma sistemleri, dinamik süreçler barındıran ortamlar için yeni uygulamalara fırsat vermektedir. Olay sınıflandırması, herhangi bir sensör ya da sensör dizisinden gelen işaretlerin analiz edilerek, belirli bir olaya ait dinamik süreçle eşleştirilmesi olarak tanımlanabilir. Genelde, insan etkinliklerinin izlenmesi uygulamalarında kamera ve mikrofonlar kullanılmaktadır. Bir alternatif veya bir tümleyici yaklaşım olarak, bahsi geçen uygulamalarda PIR sensörleri de kullanılabilir. Bu bildiride, olay sınıflandırılması için Bayes yaklaşımına dayalı olan şartlı Gauss karışım modeli (CGMM) kullanımı önerilmektedir. Deneysel çalışmalarda, bu yaklaşımın başarılı olduğu görülmüştür.Item Open Access Low-frequency noise behavior at reverse bias region in InAs/GaSb superlattice photodiodes on mid-wave infrared(SPIE, 2013) Tansel, T.; Kutluer, K.; Muti, Abdullah; Salihoğlu, Ömer; Aydınlı, Atilla; Turan, R.We describe a relationship between the noise characterization and activation energy of InAs/GaSb superlattice Mid- Wavelength-Infrared photodiodes for different passivation materials applied to the device. The noise measurements exhibited a frequency dependent plateau (i.e. 1/f-noise characteristic) for unpassivated as well as Si3N4 passivated samples whereas 1/f-type low noise suppression (i.e. frequency independent plateau) with a noise current reduction of more than one order of magnitude was observed for SiO2 passivation. For reverse bias values below -0.15V, the classical Schottky-noise calculation alone did not appear to describe the noise mechanism in a SL noise behavior, which shows a divergence between theoretically and experimentally determined noise values. We identify that, the additional noise appears, with and without passivation, at the surface activation energy of < 60 meV and is inversely proportional to the reverse bias. This is believed to be caused by the surface dangling-bonds (as well as surface states) whose response is controlled by the applied reverse bias. The calculated noise characteristics showed a good agreement with the experimental data. © 2013 SPIE.Item Open Access LWIR all-atomic layer deposition ZnO bilayer microbolometer for thermal imaging(SPIE, 2017) Poyraz, M.; Gorgulu, K.; Sisman, Z.; Tanrikulu, M. Y.; Okyay, Ali KemalWe propose an all-ZnO bilayer microbolometer, operating in the long-wave infrared regime that can be implemented by consecutive atomic layer deposition growth steps. Bilayer design of the bolometer provides very high absorption coefficients compared to the same thickness of a single ZnO layer. High absorptivity of the bilayer structure enables higher performance (lower noise equivalent temperature difference and time constant values) compared to single-layer structure. We observe these results computationally by conducting both optical and thermal simulations. © 2017 Society of Photo-Optical Instrumentation Engineers (SPIE).Item Open Access Millimeter-wave scale metamaterials(IEEE, 2009-11) Alıcı, Kamil Boratay; Özbay, EkmelWe review two metamaterial configurations, which are operating at the millimeter-wave scale, in terms of design, fabrication, and characterization. We observed both numerically and experimentally at around 100 GHz a narrow frequency band for which the metamaterial was low loss and had a negative index of refraction. We investigated flat and wedge shaped samples to support our characterization results. We analyzed the transmission band with respect to number of layers at the propagation direction and commented on the bulk nature of these metamaterials. Oblique response of the planar sample was also included in this study. Finally, we demonstrate a device, which yields a rather small angular width at the far field radiation pattern, and composed of a horn antenna and flat metamaterial slabs at the propagation direction. ©2009 IEEE.Item Open Access N-structure based on InAs/AlSb/GaSb superlattice photodetectors(Academic Press, 2015) Hostut, M.; Alyoruk, M.; Tansel, T.; Kilic, A.; Turan, R.; Aydınlı, Atilla; Ergun, Y.We have studied the theoretical and experimental properties of InAs/AlSb/GaSb based type-II superlattice (T2SL) pin photodetector called N-structure. Electronic properties of the superlattice such as HH-LH splitting energies was investigated using first principles calculations taking into account InSb and AlAs as possible interface transition alloys between AlSb/InAs layers and individual layer thicknesses of GaSb and InAs. T2SL N-structure was optimized to operate as a MWIR detector based on these theoretical approaches tailoring the band gap and HH-LH splitting energies with InSb transition layers between InAs/AlSb interfaces. Experimental results show that AlSb layers in the structure act as carrier blocking barriers reducing the dark current. Dark current density and R0A product at 125 K were obtained as 1.8 × 10-6 A cm-2 and 800ωcm2 at zero bias, respectively. The specific detectivity was measured as 3 × 1012 Jones with cut-off wavelengths of 4.3 μm at 79 K reaching to 2 × 109 Jones and 4.5 μm at 255 K. ©2014 Elsevier Ltd. All rights reserved.Item Open Access A near IR di-styryl BODIPY-based ratiometric fluorescent chemosensor for Hg(II)(Elsevier, 2010) Atilgan, S.; Kutuk, I.; Ozdemir, T.A novel BODIPY-based near-IR emitting probe as a selective and sensitive fluorophore for Hg(II) is synthesized. This versatile BODIPY fluorophore is functionalized for long wavelength emission at the 3 and 5 positions via a condensation reaction in which two dithiodioxomonoaza-based crown-containing phenyl units are conjugated to the BODIPY core as a chelating unit. This designed fluorophore, employing an ICT sensor can be used effectively to detect Hg(II) cations by way of a hypsochromic shift (∼90 nm) in both the absorption and emission spectra. © 2009 Elsevier Ltd. All rights reserved.Item Open Access A plasmonically enhanced pixel structure for uncooled microbolometer detectors(SPIE, 2013) Erturk O.; Battal, Enes; Kucuk, S.E.; Okyay, Ali Kemal; Akin, T.This paper introduces a method of broadband absorption enhancement that can be integrated with the conventional suspended microbolometer process with no significant additional cost. The premise of this study is that electric field can be enhanced throughout the structural layer of the microbolometer, resulting in an increase in the absorption of the infrared radiation in the long wave infrared window. A concentric double C-shaped plasmonic geometry is simulated using the FDTD method, and this geometry is fabricated on suspended pixel arrays. Simulation results and FTIR measurements are in good agreement indicating a broadband absorption enhancement in the 8 μm - 12 μm range for LWIR applications. The enhancement is attained using metallic geometries embedded in the structural layer of the suspended microbridge, where the metallic-dielectric interface increases the average absorption of a 35 μm pixel from 67.6% to 80.1%. © 2013 SPIE.