Browsing by Subject "Heterostructures"
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Item Open Access Alkali metal intercalation in MXene/Graphene heterostructures: a new platform for ion battery applications(American Chemical Society, 2019) Demiroğlu, İ.; Peeters, F. M.; Gülseren, Oğuz; Çakır, D.; Sevik, C.The adsorption and diffusion of Na, K, and Ca atoms on MXene/graphene heterostructures of MXene systems Sc2C(OH)2, Ti2CO2, and V2CO2 are systematically investigated by using first-principles methods. We found that alkali metal intercalation is energetically favorable and thermally stable for Ti2CO2/graphene and V2CO2/graphene heterostructures but not for Sc2C(OH)2. Diffusion kinetics calculations showed the advantage of MXene/graphene heterostructures over sole MXene systems as the energy barriers are halved for the considered alkali metals. Low energy barriers are found for Na and K ions, which are promising for fast charge/discharge rates. Calculated voltage profiles reveal that estimated high capacities can be fully achieved for Na ion in V2CO2/graphene and Ti2CO2/graphene heterostructures. Our results indicate that Ti2CO2/graphene and V2CO2/graphene electrode materials are very promising for Na ion battery applications. The former could be exploited for low voltage applications while the latter will be more appropriate for higher voltages.Item Open Access Blue-emitting CdSe nanoplatelets enabled by sulfur-alloyed heterostructures for light-emitting diodes with low turn-on voltage(American Chemical Society, 2021-12-28) İzmir, M.; Sharma, A.; Shendre, S.; Durmuşoğlu, E. G.; Sharma, V. K.; Shabani, Farzan; Baruj, Hamed Dehghanpour; Delikanlı, Savaş; Sharma, M.; Demir, Hilmi VolkanColloidal nanoplatelets (NPLs) have emerged as the last class of semiconductor nanocrystals for their potential optoelectronic applications. The heterostructures of these nanocrystals can achieve high photoluminescence quantum yield and enhanced photostability, along with color purity. Such advantages make them a promising candidate for solution-processable light-emitting diodes (LEDs). However, to date, blue-emitting CdSe nanoplatelets (NPLs) exhibit poor photoluminescence quantum yield and also typically suffer from a rolled-up morphology. To mitigate these problems in this work, we propose and demonstrate efficient alloyed 4 ML CdSe1–xSx nanoplatelets having a CdS crown with enhanced photoluminescence quantum yields (up to 60%) in the blue region (462–487 nm). We successfully used these NPLs as an electrically driven active emitter in the blue-emitting NPL-LEDs with a low turn-on voltage of ∼4 V. The Commission Internationale de L’Eclairage (CIE) coordinates of (0.23, 0.14) were obtained for these blue-emitting NPL-LEDs. These emitters could potentially open up the opportunity for full-color displays using these NPL-based blue LEDs in conjunction with the red and green ones.Item Open Access Colloidal heterostructures of semiconductor quantum wells : synthesis, characterization and applications(Bilkent University, 2017-06) Keleştemur, YusufColloidal semiconductor quantum wells, also known as nanoplatelets (NPLs), have recently emerged as a new class of colloidal semiconductor nanocrystals enabling fascinating excitonic properties. With their quasi two-dimensional structure resembling epitaxially-grown quantum wells, these atomically- at nanoplatelets exhibit narrow emission linewidths, giant linear and nonlinear absorption cross-sections, and ultrafast uorescence lifetimes when compared to other classes of semiconductor nanocrystals. These appealing features have led to achievement of low lasing thresholds and high color purity by using simple heterostructures of these NPLs. To further exploit the benefits of these solutionprocessed NPLs and develop next-generation colloidal optoelectronic devices, novel heterostructures of NPLs with superior excitonic properties are in high demand. In this thesis, to address these needs, we proposed and demonstrated novel heterostructured NPLs. This thesis includes the rational design and systematic synthesis and characterization of these hetero-NPLs. To overcome the lower photoluminescence quantum yield (PL-QY) and stability issues of core/shell NPLs, we successfully synthesized CdSe/CdS/CdS core/crown/shell NPLs resembling platelet-in-a-box. With this advanced architecture, we accomplished substantially enhanced PL-QY and absorption crosssection as well as stability, allowing for the achievement of low-threshold optical gain. However, due to the pure vertical confinement observed in these NPLs, these exciting excitonic features of NPLs suffered from the limited spectral tunability. By developing homogenously alloyed CdSexS1 NPLs together with their alloyed core/crown and alloyed core/shell heterostructures, we succeeded in obtaining highly tunable excitonic features and further extending tunability of the optical gain from these NPLs. In addition to the NPLs having Type-I electronic structure, we demonstrated the highly uniform growth of CdSe/CdTe core/crown NPLs having Type-II electronic structure exhibiting unique excitonic properties Additionally, to realize the evolution of Type-II electronic structure, we synthesized CdSe/CdSe1-xTex core/crown NPLs by precisely tailoring the composition of the crown region. Without changing their vertical thicknesses, we achieved again highly tunable excitonic features and near-unity PL-QY from these hetero- NPLs. Based on the proposed architectures of these heteronanoplatelets, we believe the findings of this thesis provide important guidelines and inspiration for the synthesis of highly efficient and stable heterostructured NPLs to construct high-performance colloidal optoelectronic devices, possibly challenging their conventional epitaxially-grown counterparts.Item Open Access Conclusions and future outlook(Springer Singapore, 2022-10-28) Erdem, Onur; Demir, Hilmi VolkanItem Open Access Dielectric screening effects on electron transport in Ga0.51In0.49P/InxGa1-xAs/GaAs quantum wells(American Institute of Physics, 2000-04-18) Besikci, C.; Bakir, A. T.; Tanatar, BilalThe effects of dielectric screening on the two dimensional polar optical phonon scattering and on electron transport in Ga0.51In0.49P/InxGa1-xAs/GaAs (x=0, 0.15, and 0.25) modulation doped heterostructures and high electron mobility transistors are investigated through the ensemble Monte Carlo technique. The two dimensional polar optical phonon scattering rates including and excluding dielectric screening effects are calculated using the self-consistently evaluated electronic states in the quantum well. The calculated scattering rates are compared in order to see the effects of screening on the inter- and intra-subband scattering. Screening significantly lowers the intra-subband polar optical phonon scattering rates in both lattice matched and pseudomorphic structures. This results in a considerable lowering of the critical electric field beyond which negative differential resistance is seen. Screening also modifies the dependence of transport properties on the quantum well parameters. The results of the ensemble Monte Carlo simulations of high electron mobility transistors show that the performance of the device is considerably underestimated, if screening is not included in the calculation of the polar optical phonon scattering rates. (C) 2000 American Institute of Physics.Item Open Access The effect of insulator layer thickness on the main electrical parameters in (Ni/Au)/AlxGa1-xN/AIN/GaN heterostructures(Wiley, 2010) Altindal, S.; Şafak, Y.; Taşçloǧlu I.; Özbay, Ekmel(Ni/Au)Alx Ga1-x N/AlN/GaN(x = 0.22) heterostructures with and without a passivation layer of the SiNx were fabricated in order to see the effect of the insulator layer on the main electrical parameters such as zero-bias barrier height (BH) (φBO), ideality factor (n), series resistance (Rs) of the structure, and the interface state density (Nss). Some of these parameters were determined from both I-V and admittance (C-V and G/ω-V) measurements at room temperature and at 1 MHz and were compared. The experimental results show that the value of N ss in a Schottky contact without passivation is nearly 1 order of magnitude larger than that in a Schottky contact with SiNx passivation layers. Also, the values of Rs increase with the increasing thickness of the passivation layer. In the forward bias region, the negative values of capacitance are an attractive result of this study. This negative capacitance disappears in presence of the passivation layer. Copyright © 2010 John Wiley & Sons, Ltd.Item Open Access Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures(ELSEVIER, 2010) Arslan, E.; Bütün, S.; Şafak, Y.; Uslu, H.; Tascioglu I.; Altindal, S.; Özbay, EkmelThe forward and reverse bias I-V, C-V, and G/ω-V characteristics of (Ni/Au) Schottky barrier diodes (SBDs) on the Al 0.22Ga 0.78N/AlN/GaN high-electron-mobility-transistor (HEMTs) without and with SiN x insulator layer were measured at room temperature in order to investigate the effects of the insulator layer (SiN x) on the main electrical parameters such as the ideality factor (n), zero-bias barrier height ( B0), series resistance (R s), interface-state density (N ss). The energy density distribution profiles of the N ss were obtained from the forward bias I-V characteristics by taking into account the voltage dependence of the effective barrier height ( e) and ideality factor (n V) of devices. In addition, the N ss as a function of E c-E ss was determined from the low-high frequency capacitance methods. It was found that the values of N ss and R s in SBD HEMTs decreases with increasing insulator layer thickness.Item Open Access Energy relaxation probed by weak antilocalization measurements in GaN heterostructures(2009) Cheng H.; Bıyıklı, Necmi; Xie J.; Kurdak Ç.; Morko̧ H.Energy relaxation and electron-phonon (e-p) interaction are investigated in wurtzite Al0.15Ga0.85 N/AlN/GaN and Al0.83 In0.17 N/AlN/GaN heterostructures with polarization induced two-dimensional electron gases in the Bloch-Grüneisen regime. Weak antilocalization (WAL) and Shubnikov-de Haas measurements were performed on gated Hall bar structures at temperatures down to 0.3 K. We used WAL as a thermometer to measure the electron temperature Te as a function of the dc bias current. We found that the power dissipated per electron, P e, was proportional to Te4 due to piezoelectric acoustic phonon emission by hot electrons. We calculated Pe as a function of Te without any adjustable parameters for both the static and the dynamic screening cases of piezoelectric e-p coupling. In the temperature range of this experiment, the static screening case was expected to be applicable; however, our data was in better agreement with the dynamic screening case. © 2009 American Institute of Physics.Item Open Access Energy transfer rate in Coulomb coupled quantum wires(American Institute of Physics, 1997) Tanatar, BilalWe study the energy transfer rate for electrons in two parallel quantum wires due to interwire Coulomb interactions. The energy transfer rate between the wires (similar to the Coulomb drag effect in which momentum transfer rate is measured) is calculated as a function of temperature for several wire separation distances. We employ the full wave vector and frequency dependent random-phase approximation at finite temperature to describe the effective interwire Coulomb interaction. We find that the energy transfer rate at intermediate temperatures (i.e., T similar to 0.3E(F)) is dominated by the collective modes (plasmons) of ale system. Nonlinear effects on the energy transfer rate is also explored. (C) 1997 American Institute of Physics.Item Open Access Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AlN/GaN heterostructures(Elsevier, 2010) Arslan, E.; Şafak, Y.; Taşçioğlu, I.; Uslu, H.; Özbay, EkmelThe dielectric properties and AC electrical conductivity (σ ac)of the (Ni/Au)/Al 0.22Ga 0.78N/AlN/GaN heterostructures, with and without the SiNx passivation, have been investigated by capacitance-voltage and conductance-voltage measurements in the wide frequency (5kHz-5 MHz) and temperature (80-400 K) range. The experimental values of the dielectric constant (ε'), dielectric loss (ε' '), loss tangent (tand), σ ac and the real and imaginary part of the electric modulus (M' and M' ') were found to be a strong function of frequency and temperature. A decrease in the values of ε' and ε' ' was observed, in which they both showed an increase in frequency and temperature. The values of M' and M' ' increase with increasing frequency and temperature. The σ ac increases with increasing frequency, while it decreases with increasing temperature. It can be concluded, therefore, that the interfacial polarization can occur more easily at low frequencies and temperatures with the number of interface states density located at the metal/semiconductor interface. It contributes to the e' and σ ac. © 2009 Elsevier B.V. All rights reserved.Item Open Access Germanium for high performance MOSFETs and optical interconnects(2008-10) Saraswat, K. C.; Kim, D.; Krishnamohan, T.; Kuzum, D.; Okyay, Ali Kemal; Pethe, A.; Yu H.-Y.It is believed that to continue the scaling of silicon CMOS innovative device structures and new materials have to be created in order to continue the historic progress in information processing and transmission. Recently germanium has emerged as a viable candidate to augment Si for CMOS and optoelectronic applications. In this work we will first review recent results on growth of thin and thick films of Ge on Si, technology for appropriate cleaning of Ge, surface passivation using high-κ dielectrics, and metal induced crystallization of amorphous Ge and dopant activation. Next we will review application of Ge for high performance MOSFETs. Innovative Si/Ge MOS heterostructures will be described with high on current and low off currents. Finally we will describe optical detectors and modulators for on-chip and off-chip interconnect. Successful integration of Ge on Si should allow continued scaling of silicon CMOS to below 22 nm node. ©The Electrochemical Society.Item Open Access Graphene-quantum dot hybrid optoelectronics at visible wavelengths(American Chemical Society, 2018) Salihoglu, O.; Kakenov, N.; Balci, O.; Balci, S.; Kocabas, C.With exceptional electronic and gate-tunable optical properties, graphene provides new possibilities for active nanophotonic devices. Requirements of very large carrier density modulation, however, limit the operation of graphene based optical devices in the visible spectrum. Here, we report a unique approach that avoids these limitations and implements graphene into optoelectronic devices working in the visible spectrum. The approach relies on controlling nonradiative energy transfer between colloidal quantum-dots and graphene through gate-voltage induced tuning of the charge density of graphene. We demonstrate a new class of large area optoelectronic devices including fluorescent display and voltage-controlled color-variable devices working in the visible spectrum. We anticipate that the presented technique could provide new practical routes for active control of light-matter interaction at the nanometer scale, which could find new implications ranging from display technologies to quantum optics.Item Open Access High sensitivity and multifunctional micro-Hall sensors fabricated using InAlSb/InAsSb/InAlSb heterostructures(2009) Bando, M.; Ohashi, T.; Dede, M.; Akram, R.; Oral, A.; Park, S.Y.; Shibasaki I.; Handa H.; Sandhu, A.Further diversification of Hall sensor technology requires development of materials with high electron mobility and an ultrathin conducting layer very close to the material's surface. Here, we describe the magnetoresistive properties of micro-Hall devices fabricated using InAlSb/InAsSb/InAlSb heterostructures where electrical conduction was confined to a 30 nm-InAsSb two-dimensional electron gas layer. The 300 K electron mobility and sheet carrier concentration were 36 500 cm2 V-1 s-1 and 2.5× 1011 cm-2, respectively. The maximum current-related sensitivity was 2 750 V A-1 T-1, which was about an order of magnitude greater than AlGaAs/InGaAs pseudomorphic heterostructures devices. Photolithography was used to fabricate 1 μm×1 μm Hall probes, which were installed into a scanning Hall probe microscope and used to image the surface of a hard disk. © 2009 American Institute of Physics.Item Open Access Highly stable multicrown heterostructures of type-II nanoplatelets for ultralow threshold optical gain(American Chemical Society, 2019) Dede, Didem; Taghipour, Nima; Quliyeva, Ulviyya; Sak, Mustafa; Kelestemur, Yusuf; Güngör, Kıvanç; Demir, Hilmi VolkanSolution-processed type-II quantum wells exhibit outstanding optical properties, which make them promising candidates for light-generating applications including lasers and LEDs. However, they may suffer from poor colloidal stability under ambient conditions and show strong tendency to assemble into face-to-face stacks. In this work, to resolve the colloidal stability and uncontrolled stacking issues, we proposed and synthesized CdSe/CdSe1–xTex/CdS core/multicrown heteronanoplatelets (NPLs), controlling the amount of Te up to 50% in the crown without changing their thicknesses, which significantly increases their colloidal and photostability under ambient conditions and at the same time preserving their attractive optical properties. Confirming the final lateral growth of CdS sidewalls with X-ray photoelectron spectroscopy, energy-dispersive analysis, and photoelectron excitation spectroscopy, we found that the successful coating of this CdS crown around the periphery of conventional type-II NPLs prevents the unwanted formation of needle-like stacks, which results in reduction of the undesired scattering losses in thin-film samples of these NPLs. Owing to highly efficient exciton funneling from the outmost CdS crown accompanied by the reduced scattering and very low waveguide loss coefficient (∼18 cm–1), ultralow optical gain thresholds of multicrown type-II NPLs were achieved to be as low as 4.15 μJ/cm2 and 2.48 mJ/cm2 under one- and two-photon absorption pumping, respectively. These findings indicate that the strategy of using engineered advanced heterostructures of nanoplatelets provides solutions for improved colloidal stability and enables enhanced photonic performance.Item Open Access Improvement of breakdown characteristics in AlGaN/GaN/AlxGa 1-xN HEMT based on a grading Al xGa 1-xN buffer layer(Wiley, 2010-08-03) Yu, H.; Lisesivdin, S. B.; Ozturk, M.; Bolukbas, B.; Kelekci, O.; Ozturk, M. K.; Ozcelik, S.; Caliskan, D.; Cakmak, H.; Demirel, P.; Özbay, EkmelTo improve the breakdown characteristics of an AlGaN/GaN based high electron mobility transistor (HEMT) for high voltage applications, AlGaN/GaN/Al xGa 1-xN double heterostructure (DH-HEMTs) were designed and fabricated by replacing the semi-insulating GaN buffer with content graded Al xGa 1-xN (x=x 1 → x 2, x 1 > x 2), in turn linearly lowering the Al content x from x 1=90% to x 2=5% toward the front side GaN channel on a high temperature AlN buffer layer. The use of a highly resistive Al xGa 1-xN epilayer suppresses the parasitic conduction in the GaN buffer, and the band edge discontinuity limits the channel electrons spillover, thereby reducing leakage current and drain current collapse. In comparison with the conventional HEMT that use a semi-insulating GaN buffer, the fabricated DH-HEMT device with the same size presents a remarkable enhancement of the breakdown voltage.Item Open Access Impurity incorporation and exchange interactions in Co2+-doped CdSe/CdS core/shell nanoplatelets(American Institute of Physics, 2019) Fainblat, R.; Delikanlı, Savaş; Spee, L.; Czerny, T.; Işık, Furkan; Sharma, V. K.; Demir, Hilmi Volkan; Bacher, G.The intentional incorporation of transition metal impurities into colloidal semiconductor nanocrystals allows an extension of the host material’s functionality. While dopant incorporation has been extensively investigated in zero-dimensional quantum dots, the substitutional replacement of atoms in two-dimensional (2D) nanostructures by magnetic dopants has been reported only recently. Here, we demonstrate the successful incorporation of Co2+ ions into the shell of CdSe/CdS core/shell nanoplatelets, using these ions (i) as microscopic probes for gaining distinct structural insights and (ii) to enhance the magneto-optical functionality of the host material. Analyzing interatomic Co2+ ligand field transitions, we conclude that Co2+ is incorporated into lattice sites of the CdS shell, and effects such as diffusion of dopants into the CdSe core or diffusion of the dopants out of the heterostructure causing self-purification play a minor role. Taking advantage of the absorption-based technique of magnetic circular dichroism, we directly prove the presence of sp-d exchange interactions between the dopants and the band charge carriers in CdSe/Co2+:CdS heteronanoplatelets. Thus, our study not only demonstrates magneto-optical functionality in 2D nanocrystals by Co2+ doping but also shows that a careful choice of the dopant type paves the way for a more detailed understanding of the impurity incorporation process into these novel 2D colloidal materials.Item Open Access Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method(Springer, 2009-12-03) Yildiz, A.; Lisesivdin, S. B.; Kasap, M.; Ozcelik, S.; Özbay, Ekmel; Balkan, N.The electrical conduction mechanisms in various highly resistive GaN layers of Al x Ga1-x N/AlN/GaN/AlN heterostructures are investigated in a temperature range between T=40 K and 185 K. Temperature-dependent conductivities of the bulk GaN layers are extracted from Hall measurements with implementing simple parallel conduction extraction method (SPCEM). It is observed that the resistivity (ρ) increases with decreasing carrier density in the insulating side of the metal-insulator transition for highly resistive GaN layers. Then the conduction mechanism of highly resistive GaN layers changes from an activated conduction to variable range hopping conduction (VRH). In the studied temperature range, ln∈(ρ) is proportional to T -1/4 for the insulating sample and proportional to T -1/2 for the more highly insulating sample, indicating that the transport mechanism is due to VRH.Item Open Access Magnetotransport study on AlInN/(GaN)/AlN/GaN heterostructures(Wiley, 2012-02-27) Bayrakli, A.; Arslan, E.; Firat, T.; Ozcan, S.; Kazar, O.; Cakmak, H.; Özbay, EkmelWe report the effect of a thin GaN (2?nm) interlayer on the magnetotransport properties of AlInN/AlN/GaN-based heterostructures. Two samples were prepared (Sample A: AlInN/AlN/GaN and sample B: AlInN/GaN/AlN/GaN). Van der Pauw and Hall measurements were performed in the 1.9300?K temperature range. While the Hall mobilities were similar at room temperature (RT), sample B had nearly twice as large Hall mobility as sample A at the lowest temperature; 679 and 889?cm2/Vs at RT and 1460 and 3082?cm2/Vs at 1.9?K for samples A and B. At 1.910?K, the longitudinal magnetoresistance was measured up to 9?T, in turn revealing Shubnikovde Haas (SdH) oscillations. The carrier concentration, effective mass and quantum mobility of the two-dimensional electron gas (2DEG) were determined from SdH oscillations. At 1.9?K, the 2DEG concentration of sample B was nearly seven times larger than of sample A (1.67 x 10(13)/cm2 vs. 0.24 x 10(13)/cm2). On the contrary, the quantum mobility was changed adversely nearly three times (sample B 2500?cm2/Vs and sample A 970?cm2/Vs). The increase of the 2DEG concentration was attributed to the existence of the GaN interlayer, which has strengthened the spontaneous polarization difference between the AlInN and GaN layers of the heterostructure. Hence, the stronger electric field at the 2DEG region bent the conduction band profile downwards and consequently the quantum mobility decreased due to the increased interface roughness scattering.Item Open Access Metalorganic chemical vapor deposition growth and thermal stability of the AllNN/GaN high electron mobility transistor structure(IOP Publishing, 2011) Yu, H.; Ozturk, M.; Demirel, P.; Cakmak, H.; Bolukbas, B.; Caliskan, D.; Özbay, EkmelThe AlxIn1-xN barrier high electron mobility transistor (HEMT) structure has been optimized with varied barrier composition and thickness grown by metalorganic chemical vapor deposition. After optimization, a transistor structure comprising a 7 nm thick nearly lattice-matched Al0.83In0.17 N barrier exhibits a sheet electron density of 2.0 x 10(13) cm(-2) with a high electron mobility of 1540 cm(2) V-1 s(-1). AnAl(0.83)In(0.17)N barrier HEMT device with 1 mu m gate length provides a current density of 1.0 A mm(-1) at V-GS = 0 V and an extrinsic transconductance of 242 mS mm(-1), which are remarkably improved compared to that of a conventional Al0.3Ga0.7N barrier HEMT. To investigate the thermal stability of the HEMT epi-structures, post-growth annealing experiments up to 800 degrees C have been applied to Al0.83In0.17N and Al0.3Ga0.7N barrier heterostructures. As expected, the electrical properties of an Al0.83In0.17N barrier HEMT structure showed less stability than that of an Al0.3Ga0.7N barrier HEMT to the thermal annealing. The structural properties of Al0.83In0.17N/GaN also showed more evidence for decomposition than that of the Al0.3Ga0.7N/GaN structure after 800 degrees C post-annealing.Item Open Access Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel(IOP Publishing, 2010-03-16) Gökden, S.; Tülek, R.; Teke, A.; Leach, J. H.; Fan, Q.; Xie, J.; Özgür, Ü.; Morkoç, H.; Lisesivdin, S. B.; Özbay, EkmelThe scattering mechanisms limiting the carrier mobility in AlInN/AlN/InGaN/GaN two-dimensional electron gas (2DEG) heterostructures were investigated and compared with devices without InGaN channel. Although it is expected that InGaN will lead to relatively higher electron mobilities than GaN, Hall mobilities were measured to be much lower for samples with InGaN channels as compared to GaN. To investigate these observations the major scattering processes including acoustic and optical phonons, ionized impurity, interface roughness, dislocation and alloy disorder were applied to the temperature-dependent mobility data. It was found that scattering due mainly to interface roughness limits the electron mobility at low and intermediate temperatures for samples having InGaN channels. The room temperature electron mobilities which were determined by a combination of both optical phonon and interface roughness scattering were measured between 630 and 910 cm2 (V s)-1 with corresponding sheet carrier densities of 2.3-1.3 × 1013 cm-2. On the other hand, electron mobilities were mainly limited by intrinsic scattering processes such as acoustic and optical phonons over the whole temperature range for Al0.82In 0.18N/AlN/GaN and Al0.3Ga0.7N/AlN/GaN heterostructures where the room temperature electron mobilities were found to be 1630 and 1573 cm2 (V s)-1 with corresponding sheet carrier densities of 1.3 and 1.1 × 1013 cm-2, respectively. By these analyses, it could be concluded that the interfaces of HEMT structures with the InGaN channel layer are not as good as that of a conventional GaN channel where either AlGaN or AlInN barriers are used. It could also be pointed out that as the In content in the AlInN barrier layer increases the interface becomes smoother resulted in higher electron mobility.