Browsing by Author "Ulusoy, T. G."
Now showing 1 - 7 of 7
Results Per Page
Sort Options
Item Open Access ∼3-nm ZnO nanoislands deposition and application in charge trapping memory grown by single ALD step(Nature Publishing Group, 2016) El-Atab, N.; Chowdhury F.; Ulusoy, T. G.; Ghobadi, A.; Nazirzadeh A.; Okyay, Ali Kemal; Nayfeh, A.Low-dimensional semiconductor nanostructures are of great interest in high performance electronic and photonic devices. ZnO is considered to be a multifunctional material due to its unique properties with potential in various applications. In this work, 3-nm ZnO nanoislands are deposited by Atomic Layer Deposition (ALD) and the electronic properties are characterized by UV-Vis-NIR Spectrophotometer and X-ray Photoelectron Spectroscopy. The results show that the nanostructures show quantum confinement effects in 1D. Moreover, Metal-Oxide-Semiconductor Capacitor (MOSCAP) charge trapping memory devices with ZnO nanoislands charge storage layer are fabricated by a single ALD step and their performances are analyzed. The devices showed a large memory window at low operating voltages with excellent retention and endurance characteristics due to the additional oxygen vacancies in the nanoislands and the deep barrier for the trapped holes due to the reduction in ZnO electron affinity. The results show that the ZnO nanoislands are promising in future low power memory applications. © The Author(s) 2016.Item Open Access Cubic-phase zirconia nano-island growth using atomic layer deposition and application in low-power charge-trapping nonvolatile-memory devices(Institute of Physics Publishing Ltd., 2017) El-Atab, N.; Ulusoy, T. G.; Ghobadi, A.; Suh, J.; Islam, R.; Okyay, Ali Kemal; Saraswat, K.; Nayfeh, A.The manipulation of matter at the nanoscale enables the generation of properties in a material that would otherwise be challenging or impossible to realize in the bulk state. Here, we demonstrate growth of zirconia nano-islands using atomic layer deposition on different substrate terminations. Transmission electron microscopy and Raman measurements indicate that the nano-islands consist of nano-crystallites of the cubic-crystalline phase, which results in a higher dielectric constant (κ ∼ 35) than the amorphous phase case (κ ∼ 20). X-ray photoelectron spectroscopy measurements show that a deep quantum well is formed in the Al2O3/ZrO2/Al2O3 system, which is substantially different to that in the bulk state of zirconia and is more favorable for memory application. Finally, a memory device with a ZrO2 nano-island charge-trapping layer is fabricated, and a wide memory window of 4.5 V is obtained at a low programming voltage of 5 V due to the large dielectric constant of the islands in addition to excellent endurance and retention characteristics.Item Open Access Enhanced performance of dye-sensitized solar cells by omnidirectional antireflective coatings(S P I E - International Society for Optical Engineering, 2015) Ulusoy, T. G.; Daglar, B.; Yildirim, A.; Ghobadi, A.; Bayındır, Mehmet; Okyay, Ali KemalOrganically modified silica (ORMOSIL)-coated dye-sensitized solar cells (DSSCs) with improved energy conversion efficiency are demonstrated. ORMOSIL-coated DSSC surfaces exhibit omnidirectional low reflectivity over a broad range of wavelengths (400-800 nm). The short-circuit current density (JSC) is enhanced up to 23% at normal incidence (θ=0 deg) as a result of ORMOSIL coating. In addition, JSC enhancement is even higher at larger angles of incidence; 84% enhancement was observed at θ=30 deg. Moreover, ORMOSIL coating is superhydrophobic with a contact angle of 155 deg. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its.Item Open Access Enhanced Performance of Nanowire-Based All-TiO2 Solar Cells using Subnanometer-Thick Atomic Layer Deposited ZnO Embedded Layer(Pergamon Press, 2015) Ghobadi, A.; Yavuz, H. I.; Ulusoy, T. G.; Icli, K. C.; Ozenbas, M.; Okyay, Ali KemalIn this paper, the effect of angstrom-thick atomic layer deposited (ALD) ZnO embedded layer on photovoltaic (PV) performance of Nanowire-Based All-TiO2 solar cells has been systematically investigated. Our results indicate that by varying the thickness of ZnO layer the efficiency of the solar cell can be significantly changed. It is shown that the efficiency has its maximum for optimal thickness of 1 ALD cycle in which this ultrathin ZnO layer improves device performance through passivation of surface traps without hampering injection efficiency of photogenerated electrons. The mechanisms contributing to this unprecedented change in PV performance of the cell have been scrutinized and discussed.Item Open Access A Heterojunction Design of Single Layer Hole Tunneling ZnO Passivation Wrapping around TiO 2 Nanowires for Superior Photocatalytic Performance(Nature Publishing Group, 2016) Ghobadi, A.; Ulusoy, T. G.; Garifullin R.; Güler, Mustafa O.; Okyay, Ali KemalNanostructured hybrid heterojunctions have been studied widely for photocatalytic applications due to their superior optical and structural properties. In this work, the impact of angstrom thick atomic layer deposited (ALD) ZnO shell layer on photocatalytic activity (PCA) of hydrothermal grown single crystalline TiO 2 nanowires (NWs) is systematically explored. We showed that a single cycle of ALD ZnO layer wrapped around TiO 2 NWs, considerably boosts the PCA of the heterostructure. Subsequent cycles, however, gradually hinder the photocatalytic activity (PCA) of the TiO 2 NWs. Various structural, optical, and transient characterizations are employed to scrutinize this unprecedented change. We show that a single atomic layer of ZnO shell not only increases light harvesting capability of the heterostructure via extension of the absorption toward visible wavelengths, but also mitigates recombination probability of carriers through reduction of surface defects density and introduction of proper charge separation along the core-shell interface. Furthermore, the ultrathin ZnO shell layer allows a strong contribution of the core (TiO 2) valence band holes through tunneling across the ultrathin interface. All mechanisms responsible for this enhanced PCA of heterostructure are elucidated and corresponding models are proposed.Item Open Access Self-assembled peptide nanofiber templated ALD growth of TiO2 and ZnO semiconductor nanonetworks(Wiley - V C H Verlag GmbH & Co. KGaA, 2016) Garifullin, R.; Eren, H.; Ulusoy, T. G.; Okyay, Ali Kemal; Bıyıklı, Necmi; Güler, Mustafa O.Here peptide amphiphile (PA) nanofiber network is exploited as a three‐dimensional soft template to construct anatase TiO2 and wurtzite ZnO nanonetworks. Atomic layer deposition (ALD) technique is used to coat the organic nanonetwork template with TiO2and ZnO. ALD method enables uniform and conformal coatings with precisely controlled TiO2 and ZnO thickness. The resulting semiconducting metal oxide nanonetworks are utilized as anodic materials in dye‐sensitized solar cells. Effect of metal oxide layer thickness on device performance is studied. The devices based on thin TiO2 coatings (<10 nm) demonstrate considerable dependence on material thickness, whereas thicker (>17 nm) ZnO‐based devices do not show an explicit correlation.Item Open Access Surface engineered angstrom thick ZnO-sheathed TiO2 nanowires as photoanodes for performance enhanced dye-sensitized solar cells(Royal Society of Chemistry, 2014) Ulusoy, T. G.; Ghobadi, A.; Okyay, Ali KemalThis paper presents a systematic study on the effects of angstrom-thick atomic layer deposited (ALD) ZnO sheaths on hydrothermally-grown TiO2 nanowires (NWs) used as photoanodes in dye-sensitized solar cells (DSSCs). We designed, synthesized and characterized the samples prepared using different numbers of ZnO cycles and compared their photovoltaic (PV) performances. The device consisting of TiO2 NWs coated with the optimum thickness (two cycles) of ZnO shell exhibits a three-fold increase in efficiency compared to a control reference device. This paper reports results and features that demonstrate the passivation of surface state traps upon deposition of ZnO shells. While this passivation of surface traps provides a reduction in the back-reactions of the surface state mediated electrons (KET trap), it is speculated that ZnO-induced surface band bending (SBB) substantially reduces the recombination rate of the device by reducing the recombination rate of the conduction band (CB) electrons (KET CB). Moreover, an enhancement in the amount of dye uptake for ZnO-coated TiO2 samples is observed and explained with the isoelectric point (IEP) concept. In spite of the excellent PV power conversion efficiencies achieved by the first ZnO cycles, thicker layers impede the electron injection rate, reducing the efficiency of the device by capturing the photogenerated dye electrons in ZnO quantum wells. Here, we investigate the mechanisms contributing to this unprecedented change and correlate them with the enhancement in device efficiency.