Browsing by Author "Pavlova, S."
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Item Open Access Femtosecond laser written waveguides deep inside silicon(Optical Society of America, 2017) Pavlov, I.; Tokel, O.; Pavlova, S.; Kadan, V.; Makey, G.; Turnalı, A.; Yavuz, Ö.; Ilday, F. Ö.Photonic devices that can guide, transfer, or modulate light are highly desired in electronics and integrated silicon (Si) photonics. Here, we demonstrate for the first time, to the best of our knowledge, the creation of optical waveguides deep inside Si using femtosecond pulses at a central wavelength of 1.5 μm. To this end, we use 350 fs long, 2 μJ pulses with a repetition rate of 250 kHz from an Er-doped fiber laser, which we focused inside Si to create permanent modifications of the crystal. The position of the beam is accurately controlled with pump-probe imaging during fabrication. Waveguides that were 5.5 mm in length and 20 μm in diameter were created by scanning the focal position along the beam propagation axis. The fabricated waveguides were characterized with a continuous-wave laser operating at 1.5 μm. The refractive index change inside the waveguide was measured with optical shadowgraphy, yielding a value of 6 × 10−4, and by direct light coupling and far-field imaging, yielding a value of 3.5 × 10−4. The formation mechanism of the modification is discussed.Item Open Access Generation of 2-μ J 410-fs pulses from a single-mode chirped-pulse fiber laser operating at 1550 nm(Springer Verlag, 2018) Pavlova, S.; Rezaei, Hossein; Pavlov, Ihor; Kalaycıoğlu, Hamit; İlday, Fatih OmerWe report on a simple, robust, femtosecond chirped-pulse-amplification system, based on Er- and Er-Yb-doped fibers, operating at a central wavelength of 1555 nm. The entire system is constructed from commercially available fiber components, except the grating compressor, for easy duplication by other researchers. The laser system produces chirped pulses with up to 4μJ of pulse energy at 250 kHz. After dechirping, the pulse duration is 410 fs and the pulse energy is reduced to 2μJ. The repetition rate of the laser is electronically tunable between 125 kHz and 60 MHz, limited by strong amplified spontaneous emission (ASE) generation at the low end. The amplifier system is almost completely fiber integrated, except for the pump delivery into the final amplifier stage, which is free-space backward-pumped to reduce undesired nonlinear effects, and the compressor which was designed using the gratings. The laser is practically free of misalignment and has exhibited excellent long-term stability during its use in various experiments for more than 600 working hours.Item Open Access Optical waveguides written deep inside silicon by femtosecond laser(OSA, 2017) Pavlov, Ihor; Tokel, Onur; Pavlova, S.; Kadan, V.; Makey, Ghaith; Turnalı, Ahmet; Çolakoğlu, T.; Yavuz, O.; İlday, Fatih ÖmerSummary form only given. Photonic devices that can guide, transfer or modulate light are highly desired in electronics and integrated silicon photonics. Through the nonlinear processes taking place during ultrafast laser-material interaction, laser light can impart permanent refractive index change in the bulk of materials, and thus enables the fabrication of different optical elements inside the material. However, due to strong multi-photon absorption of Si resulting delocalization of the light by free carriers induced plasma defocusing, the subsurface Si modification with femtosecond laser was not realized so far [1, 2]. Here, we demonstrate optical waveguides written deep inside silicon with a 1.5-μm high repetition rate femtosecond laser. Due to pulse-to-pulse heat accumulation for high repetition rate laser, additional thermal lensing prevents delocalization of the light around focal point, allowing the modification. The laser with 2-μJ pulse energy, 350-fs pulse width, operating at 250 kHz focused in Si produces permanent modifications. The position of the focal point inside of the sample is accurately controlled with pumpprobe imaging during processing. Optical waveguides of ~20-μm diameter, and up to 5.5-mm elongation are fabricated by translating the beam focal position along the optical axis. The waveguides are characterized with a 1.5-μm continuous-wave laser, through optical shadow-graphy (Fig. 1 a-b, e) and direct light coupling (Fig.1 c-d, f). The measured refractive index change obtained by quantitative shadow-graphy is ~6×10 -4 . The numerical aperture of the waveguide measured from decoupled light is 0.05.Item Open Access Spatio-temporal dynamics of femtosecond laser pulses at 1550 nm wavelength in crystal silicon(Springer Verlag, 2018) Kadan, V.; Pavlova, S.; Pavlov, Ihor; Rezaei, Hossein; İlday, Ömer; Blonskyi, I.Spatio-temporal transformation of the femtosecond laser pulses at 1550 nm wavelength in c-Si is observed using the methods of time-resolved microscopy. The temporal dynamics of the pulse manifests itself both in widening of the frequency spectrum and in the change of on-axis time-width. It is shown, that along with Kerr effect, two-photon absorption also contributes to the temporal reshaping of the laser pulse. Despite the fact that absorption length for green light in c-Si is as small as 1 µm, generation of visible third harmonics was also observed in c-Si.