Browsing by Author "Caliskan, M. D."
Now showing 1 - 4 of 4
Results Per Page
Sort Options
Item Open Access Bilayer metamaterial: analysis of left-handed transmission and retrieval of effective medium parameters(Institute of Physics Publishing Ltd., 2007) Guven, K.; Cakmak, A. O.; Caliskan, M. D.; Gundogdu, T. F.; Kafesaki, M.; Soukoulis, C. M.; Özbay, EkmelWe report an experimental and numerical analysis of a planar metamaterial designed for normal-to-plane propagation, and operating at microwave frequencies. The metamaterial consists of cutwire and wire patterns, which are arranged periodically on both sides of a dielectric layer, in the form of a bilayer. The left-handed transmission band of the metamaterial is demonstrated experimentally. The effective index of refraction retrieved from the S parameters is found to be negative within this transmission band. An independent negative refraction experiment supports the existence of the negative index of refraction for the metamaterial.Item Open Access Experimental verification of metamaterial loaded small patch antennas(Emerald Group Publishing Limited, 2013) Alici, K. B.; Caliskan, M. D.; Özbay, Ekmel; Bilotti, F.; Toscano, A.; Vegni, L.Purpose - Metamaterial unit cells composed of deep subwavelength resonators brought up new aspects to the antenna miniaturization problem. The paper experimentally demonstrates a metamaterial-inspired miniaturization method for circular patch antennas. In the proposed layouts, the space between the patch and the ground plane is filled with a proper metamaterial composed of either multiple split-ring or spiral resonators (SRs). The authors have manufactured two different patch antennas, achieving an electrical size of ?/3.69 and ?/8.26, respectively. The paper aims to discuss these issues. Design/methodology/ approach - The operation of such a radiative component has been predicted by using a simple theoretical formulation based on the cavity model. The experimental characterization of the antenna has been performed by using a HP8510C vector network analyzer, standard horn antennas, automated rotary stages, coaxial cables with 50 O characteristic impedance and absorbers. Before the characterization measurements we performed a full two-port calibration. Findings - Electrically small circular patch antennas loaded with single layer metamaterials experimentally demonstrated to acceptable figures of merit for applications. The proposed miniaturization technique is potentially promising for antenna applications and the results presented in the paper constitute a relevant proof for the usefulness of the metamaterial concepts in antenna miniaturization problems. Originality/value - Rigorous experimental characterization of several meta material loaded antennas and proof of principle results were provided. Copyright © 2013 Emerald Group Publishing Limited. All rights reserved.Item Open Access Growth parameter investigation of Al0.25Ga0.75N/GaN/AlN heterostructures with Hall effect measurements(Institute of Physics Publishing Ltd., 2008-08-08) Lisesivdin, S. B.; Demirezen, S.; Caliskan, M. D.; Yildiz, A.; Kasap, M.; Ozcelik, S.; Özbay, EkmelHall effect measurements on unintentionally doped Al0.25Ga0.75N/GaN/AlN heterostructures grown by metal organic chemical vapor deposition (MOCVD) were carried out as a function of temperature (20–300 K) and magnetic field (0–1.4 T). Magnetic-field-dependent Hall data are analyzed using the quantitative mobility spectrum analysis (QMSA) technique. The QMSA technique successfully separated electrons in the 2D electron gas (2DEG) at the Al0.25Ga0.75N/GaN interface from other 2D and 3D conduction mechanisms of the samples. 2DEG mobilities, carrier densities and conductivities of the investigated samples are compared at room temperature and low temperature (20 K). For a detailed investigation of the 2DEG-related growth parameters, the scattering analyses of the extracted 2DEG were carried out for all of the samples. Using the results of the scattering analyses, the relation between the growth and scattering parameters was investigated. Increments in the interface roughness (IFR) are reported with the increased GaN buffer growth temperatures. In addition, a linear relation between the deformation potential and interface roughness (IFR) scattering is pointed out for the investigated samples, which may lead to a better understanding of the mechanism of IFR scattering.Item Open Access Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures(AIP Publishing LLC, 2009) Lisesivdin, S. B.; Balkan, N.; Makarovsky, O.; Patanè, A.; Yildiz, A.; Caliskan, M. D.; Kasap, M.; Ozcelik, S.; Özbay, EkmelThis work describes Shubnikov-de Haas (SdH) measurements in Al0.22 Ga0.78 N/AlN/GaN/AlN heterostructures. Our experiments coupled with the analysis of the Hall data at various temperatures confirm the formation of a two-dimensional electron gas (2DEG) at the AlN/GaN interface. A beating pattern in the SdH oscillations is also observed and attributed to a zero-field spin splitting of the 2DEG first energy subband. The values of the effective spin-orbit coupling parameter and zero-field spin-split energy are estimated and compared with those reported in the literature. We show that zero-field spin-split energy tends to increase with increasing sheet electron density and that our value (12.75 meV) is the largest one reported in the literature for GaN-based heterostructures.