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      Low dark current N structure superlattice MWIR photodetectors

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      Author
      Salihoğlu, O.
      Muti, Abdullah
      Turan, R.
      Ergun, Y.
      Aydınlı, Atilla
      Date
      2014
      Source Title
      Proceedings of SPIE Vol. 9070, Infrared Technology and Applications XL
      Print ISSN
      0277-786X
      Publisher
      SPIE
      Volume
      9070
      Pages
      1 - 6
      Language
      English
      Type
      Conference Paper
      Item Usage Stats
      164
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      Abstract
      Commercially available read out integrated circuits (ROICs) require the FPA to have high dynamic resistance area product at zero bias (R0A) which is directly related to dark current of the detector. Dark current arises from bulk and surface contributions. Recent band structure engineering studies significantly suppressed the bulk contribution of the type-II superlattice infrared photodetectors (N structure, M structure, W structure). In this letter, we will present improved dark current results for unipolar barrier complex supercell superlattice system which is called as "N structure". The unique electronic band structure of the N structure increases electron-hole overlap under bias, significantly. N structure aims to improve absorption by manipulating electron and hole wavefunctions that are spatially separated in T2SLs, increasing the absorption while decreasing the dark current. In order to engineer the wavefunctions, we introduce a thin AlSb layer between InAs and GaSb layers in the growth direction which also acts as a unipolar electron barrier. Despite the difficulty of perfect lattice matching of InAs and AlSb, such a design is expected to reduce dark current. Experiments were carried out on Single pixel with mesa sizes of 100 × 100 - 700 × 700 μm photodiodes. Temperature dependent dark current with corresponding R0A resistance values are reported.
      Keywords
      Barrier
      InAs/GaSb
      N design
      Passivation
      Photodetector
      Superlattice
      SiO2
      Permalink
      http://hdl.handle.net/11693/27674
      Published Version (Please cite this version)
      http://dx.doi.org/10.1117/12.2050316
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