High power K-band GaN on SiC CPW monolithic power amplifier

Cengiz, Ömer; Şen, Özlem; Özbay, Ekmel

doi:10.1109/EuMC.2014.6986731

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Author

Cengiz, Ömer

Şen, Özlem

Özbay, Ekmel

Date

2014-10

Source Title

European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference

Publisher

IEEE

Pages

1492 - 1495

Language

English

Abstract

This paper presents a high power amplifier at K-band (20.2-21.2 GHz). The AlGaN/GaN CPW MMIC amplifier is realized with 0.25 μm HEMT process on 2-inch semi-insulating SiC substrate. The amplifier has a small signal gain over 20 dB for Vds=15V and measured output power of over 31 dBm at 20.2 Ghz. PAE of the amplifier is around 22% for desired frequency band. Initial radiation hardness tests indicate a suitable stability of the technology in space. © 2014 European Microwave Association.

Keywords

AlGaN/GaN
HEMTs
MMIC power amplifier
Radiation
Space
Amplifiers (electronic)
Frequency bands
Gallium nitride
Heat radiation
Microwave amplifiers
Silicon carbide
High power amplifier
MMIC amplifiers
Radiation hardness
Small signal gain
Power amplifiers

Permalink

http://hdl.handle.net/11693/27619

Published Version (Please cite this version)

http://dx.doi.org/10.1109/EuMC.2014.6986731