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      High power K-band GaN on SiC CPW monolithic power amplifier

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      Author
      Cengiz, Ömer
      Şen, Özlem
      Özbay, Ekmel
      Date
      2014-10
      Source Title
      European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference
      Publisher
      IEEE
      Pages
      1492 - 1495
      Language
      English
      Type
      Conference Paper
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      Abstract
      This paper presents a high power amplifier at K-band (20.2-21.2 GHz). The AlGaN/GaN CPW MMIC amplifier is realized with 0.25 μm HEMT process on 2-inch semi-insulating SiC substrate. The amplifier has a small signal gain over 20 dB for Vds=15V and measured output power of over 31 dBm at 20.2 Ghz. PAE of the amplifier is around 22% for desired frequency band. Initial radiation hardness tests indicate a suitable stability of the technology in space. © 2014 European Microwave Association.
      Keywords
      AlGaN/GaN
      HEMTs
      MMIC power amplifier
      Radiation
      Space
      Amplifiers (electronic)
      Frequency bands
      Gallium nitride
      Heat radiation
      Microwave amplifiers
      Silicon carbide
      High power amplifier
      MMIC amplifiers
      Radiation hardness
      Small signal gain
      Power amplifiers
      Permalink
      http://hdl.handle.net/11693/27619
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/EuMC.2014.6986731
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
      • Institute of Materials Science and Nanotechnology (UNAM) 1775
      • Nanotechnology Research Center (NANOTAM) 1006
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