High power K-band GaN on SiC CPW monolithic power amplifier
Please cite this item using this persistent URL
http://hdl.handle.net/11693/27619Journal
European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference
Published as
http://dx.doi.org/10.1109/EuMC.2014.6986731Collections
- Conference Paper [2294]
Publisher
Institute of Electrical and Electronics Engineers Inc.
Abstract
This paper presents a high power amplifier at K-band (20.2-21.2 GHz). The AlGaN/GaN CPW MMIC amplifier is realized with 0.25 μm HEMT process on 2-inch semi-insulating SiC substrate. The amplifier has a small signal gain over 20 dB for Vds=15V and measured output power of over 31 dBm at 20.2 Ghz. PAE of the amplifier is around 22% for desired frequency band. Initial radiation hardness tests indicate a suitable stability of the technology in space. © 2014 European Microwave Association.
Related items
Showing items related by title, author, creator and subject.
-
High power K-band GaN on SiC CPW monolithic power amplifier
(Institute of Electrical and Electronics Engineers Inc., 2014)This paper presents a high power amplifier at K-band (20.2-21.2 GHz). The AlGaN/GaN CPW MMIC amplifier is realized with 0.25 μm HEMT process on 2-inch semi-insulating SiC substrate. The amplifier has a small signal gain ... -
Structural field plate length optimization for high power applications
(Institute of Electrical and Electronics Engineers Inc., 2014)In this work, we report GaN high-electron-mobility-transistors (HEMTs) on SiC with field plates of various dimensions for optimum performance. 0.6 μm gate length, 3 μm drain source space AlGaN/GaN HEMTs with field-plate ... -
Innovative laser sources operating around 2 μm
(Elsevier B.V., 2016)We report on a variety of continuous wave and pulsed laser sources based on Thulium- and Holmium-doped materials, emitting in the spectral range around 2 μm. This includes continuous wave Thulium-doped fiber lasers which ...
