High power K-band GaN on SiC CPW monolithic power amplifier
Date
2014Source Title
European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference
Publisher
Institute of Electrical and Electronics Engineers Inc.
Pages
1492 - 1495
Language
English
Type
Conference PaperItem Usage Stats
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Metadata
Show full item recordAbstract
This paper presents a high power amplifier at K-band (20.2-21.2 GHz). The AlGaN/GaN CPW MMIC amplifier is realized with 0.25 μm HEMT process on 2-inch semi-insulating SiC substrate. The amplifier has a small signal gain over 20 dB for Vds=15V and measured output power of over 31 dBm at 20.2 Ghz. PAE of the amplifier is around 22% for desired frequency band. Initial radiation hardness tests indicate a suitable stability of the technology in space. © 2014 European Microwave Association.
Keywords
AlGaN/GaNHEMTs
MMIC power amplifier
radiation
space
Amplifiers (electronic)
Frequency bands
Gallium nitride
Heat radiation
Microwave amplifiers
Silicon carbide
AlGaN/gaN
HEMTs
High power amplifier
MMIC amplifiers
MMIC power amplifier
Radiation hardness
Small signal gain
space
Power amplifiers
Permalink
http://hdl.handle.net/11693/27619Published Version (Please cite this version)
http://dx.doi.org/10.1109/EuMC.2014.6986731Collections
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