High power K-band GaN on SiC CPW monolithic power amplifier
View/
Date
2014Journal Title
European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference
Publisher
Institute of Electrical and Electronics Engineers Inc.
Pages
1492 - 1495
Language
English
Type
Conference Paper
Metadata
Show full item recordPlease cite this item using this persistent URL
http://hdl.handle.net/11693/27619Abstract
This paper presents a high power amplifier at K-band (20.2-21.2 GHz). The AlGaN/GaN CPW MMIC amplifier is realized with 0.25 μm HEMT process on 2-inch semi-insulating SiC substrate. The amplifier has a small signal gain over 20 dB for Vds=15V and measured output power of over 31 dBm at 20.2 Ghz. PAE of the amplifier is around 22% for desired frequency band. Initial radiation hardness tests indicate a suitable stability of the technology in space. © 2014 European Microwave Association.
Published as
http://dx.doi.org/10.1109/EuMC.2014.6986731Collections
Related items
Showing items related by title, author, creator and subject.
-
Structural field plate length optimization for high power applications
(Institute of Electrical and Electronics Engineers Inc., 2014)In this work, we report GaN high-electron-mobility-transistors (HEMTs) on SiC with field plates of various dimensions for optimum performance. 0.6 μm gate length, 3 μm drain source space AlGaN/GaN HEMTs with field-plate ... -
Innovative laser sources operating around 2 μm
(Elsevier B.V., 2016)We report on a variety of continuous wave and pulsed laser sources based on Thulium- and Holmium-doped materials, emitting in the spectral range around 2 μm. This includes continuous wave Thulium-doped fiber lasers which ... -
Study of the power performance of gaN based HEMTs with varying field plate lengths
(North Atlantic University Union, 2015)In this paper, we report the optimum power performance of GaN based high-electron-mobility-transistors (HEMTs) on SiC substrate with the field plates of various dimensions. The AlGaN/GaN HEMTs are fabricated with 0.6 µm ...
