Now showing items 1-4 of 4
Comparison of electron and hole charge-discharge dynamics in germanium nanocrystal flash memories
(AIP Publishing, 2008-02)
Electron and hole charge and discharge dynamics are studied on plasma enhanced chemical vapor deposition grown metal-oxide-silicon germanium nanocrystal flash memory devices. Electron and hole charge and discharge currents ...
A figure of merit for optimization of nanocrystal flash memory design
Nanocrystals can be used as storage media for carriers in flash memories. The performance of a nanocrystal flash memory depends critically on the choice of nanocrystal size and density as well as on the choice of tunnel ...
Charge retention in quantized energy levels of nanocrystals
(Elsevier B.V., 2007)
Understanding charging mechanisms and charge retention dynamics of nanocrystal (NC) memory devices is important in optimization of device design. Capacitance spectroscopy on PECVD grown germanium NCs embedded in a silicon ...
Raman and TEM studies of Ge nanocrystal formation in SiOx: Ge/SiOx multilayers
Alternating germanosilicate-siliconoxide layers of 10-30 nm thickness were grown on Si substrates by plasma enhanced chemically vapor deposition (PECVD). The compositions of the grown films were determined by X-ray ...