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Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering
(Optical Society of America, 2014)
The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes ...
Stable and efficient colour enrichment powders of nonpolar nanocrystals in LiCl
(Royal Society of Chemistry, 2015)
In this work, we propose and develop the inorganic salt encapsulation of semiconductor nanocrystal (NC) dispersion in a nonpolar phase to make a highly stable and highly efficient colour converting powder for colour ...
Near-unity emitting copper-doped colloidal semiconductor quantum wells for luminescent solar concentrators
(Wiley-VCH Verlag, 2017)
Doping of bulk semiconductors has revealed widespread success in optoelectronic applications. In the past few decades, substantial effort has been engaged for doping at the nanoscale. Recently, doped colloidal quantum dots ...
Improved performance of organic light-emitting diodes with MoO3 interlayer by oblique angle deposition
(Optical Society of America, 2011)
We fabricated and demonstrated improved organic light emitting diodes (OLEDs) in a thin film architecture of indium tin oxide (ITO)/molybdenum trioxide (MoO3) (20 nm)/ N,N'-Di(naphth-2-yl)-N,N'-diphenyl-benzidine (NPB) (50 ...
On the triplet distribution and its effect on an improved phosphorescent organic light-emitting diode
(AIP Publishing, 2012-08-28)
We reported phosphorescent organic light-emitting diodes with internal quantum efficiency near 100% with significantly reduced efficiency roll-off. It was found that the use of different hole transporting layer (HTL) affects ...
High-stability, high-efficiency organic monoliths made of oligomer nanoparticles wrapped in organic matrix
(American Chemical Society, 2016)
Oligomer nanoparticles (OL NPs) have been considered unsuitable for solid-state lighting due to their low quantum yields and low temperature stability of their emission. Here, we address these problems by forming highly ...
A charge inverter for III-nitride light-emitting diodes
(American Institute of Physics Inc., 2016)
In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes (LEDs). The charge inverter consists of a metal/electrode, an insulator, and a ...
High-efficiency and low-loss gallium nitride dielectric metasurfaces for nanophotonics at visible wavelengths
(American Institute of Physics Inc., 2017)
The dielectric nanophotonics research community is currently exploring transparent material platforms (e.g., TiO2, Si3N4, and GaP) to realize compact high efficiency optical devices at visible wavelengths. Efficient ...
Low-cost, large-scale, ordered ZnO nanopillar arrays for light extraction efficiency enhancement in quantum dot light-emitting diodes
(IEEE, 2014)
We report a QLED with enhanced light outcoupling efficiency by applying a layer of periodic ZnO nanopillar arrays. The resulting QLED reaches the record external quantum efficiency (EQE) of 9.34% in green-emitting QLEDs ...
Graded-host phosphorescent light-emitting diodes with high efficiency and reduced roll-off
(A I P Publishing LLC, 2012)
We demonstrated graded-host phosphorescent organic light-emitting diodes with high efficiency and reduced efficiency roll-off. The emissive layer of the graded host device consists of both electron and hole transport type ...