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The effect of growth conditions on the optical and structural properties of InGaN/GaN MQW LED structures grown by MOCVD
(Gazi University Eti Mahallesi, 2014)
Five period InGaN/GaN MQW LED wafers were grown by low pressure MOCVD on an AlN buffer layer, which was deposited on a c-plane (0001)-faced sapphire substrate. The effect of growth conditions, such as the well growth time, ...