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    • Determination of the band gap of indium-rich InGaN by means of photoacoustic spectroscopy 

      Oliva, R.; Zelewski, S. J.; Janicki, L.; Gwóźdź, K. R.; Serafińczuk, J.; Rudziński, M.; Özbay, Ekmel; Kudrawiec, R. (Institute of Physics Publishing, 2018)
      Photoacoustic (PA) measurements have been performed on a series of InxGa1-xN thin films grown with x > 50%. In order to illustrate the usefulness of this technique, these measurements have been compared with the results ...