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Structural and loss characterization of SiON layers for optical waveguide applications
Silicon oxynitride films for optical waveguide applications were grown at 350°C in a PECVD reactor. ATR-FTIR spectroscopy was used to identify the bond structure and absorption characteristics in the mid-infrared region. ...
Plasma enhanced chemical vapor deposition of low-loss as-grown germanosilicate layers for optical waveguides
We report on systematic growth and characterization of low-loss germanosilicate layers for use in optical waveguides. Plasma enhanced chemical vapor deposition (PECVD) technique was used to grow the films using silane, ...