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Theory of transition from the tunneling regime to point contact in scanning tunneling microscopy
(American Physical Society, 1989)
We analyze the transition from the tunneling regime to point contact in scanning tunneling microscopy. The variation of conductance as a function of tip-sample separation is sample and tip specific. Tunneling occurs through ...
Molecular-dynamics study of self-interstitials in silicon
(American Physical Society, 1987)
Results of a molecular-dynamics computer simulation are presented for atomic relaxations and relaxation energies for self-interstitials in a silicon crystal. The Stillinger-Weber model potential containing two- and three-body ...
Calculations of STM linescans-general formalism
(Pergamon Press, 1988)
We have developed a formalism for calculating the line scans of the scanning-tunneling microscopy from the realistic substrate and tip wave functions. The tip wave functions are calculated self-consistently by using a ...
Delta-Doping in strained (Si) / (Ge) superlattices
(American Physical Society, 1988)
We present a comparative study of the pseudomorphic (Si)6/(Ge)6 and -doped (Si)3(Sb)(Si)2/(Ge)6 superlattices using the self-consistent pseudopotential method. The strained (Si)6/(Ge)6 superlattice has the lowest conduction-band ...
Effect of tip profile on atomic-force microscope images: a model study
(American Physical Society, 1988)
Adopting the empirical silicon interatomic potential of Stillinger and Weber, we investigate the effect of the tip profile on the atomic-force microscope images for a prototype system, Si(001)-(2×1), and conclude that the ...
Long-range order and segregation in semiconductor superlattices
(1987)
Results of self-consistent energy-minimization calculations provide strong evidence that the ordered phases in epitaxially grown Ga1-xAlxAs and strained Si1-xGex alloys are metastable, in the sense that segregation into ...
Scanning-tunneling microscopy at small tip-to-surface distances
(1987)
The scanning-tunneling microscopy (STM) of graphite at small tip-to-surface distances is investigated using the self-consistent-field pseudopotential method. We have calculated potential, charge density in the region between ...
Metallization of Silicon upon Potassium Adsorption
(1987)
We report novel features of potassium deposition on a Si(111)-(2×1) surface as a function of coverage. The binding is ionic even at the saturation coverage without any overlayer metallization. Up to a threshold coverage, ...
Surface metallization of silicon by potassium adsorption on Si(001)-(2×1)
(American Physical Society, 1988)
We present the detailed results of self-consistent and geometry-optimized total-energy, band-structure, and charge-density calculations for a potassium-covered Si(001)-(2×1) surface, and for an unsupported potassium ...
Electronic structure of strained Sin / Gen (001) superlattices
(Pergamon Press, 1988)
Using the empirical tight binding method we have investigated the electronic properties of the Sin/Gen(001) strained superlattices as a function of the superlattice periodicity and the band misfit. For n ≥ 4 we have found ...