Now showing items 1-6 of 6

    • Design of an X-band GaN based microstrip MMIC power amplifier 

      Özipek, Ulaş (Bilkent University, 2019-02)
      RF power amplifiers are crucial components of modern radar and communication systems. However, their design poses some challenges due to device limitations in high power and high frequency regime, as well as inherent ...
    • GaN based LNA MMICs for X-band applications 

      Zafar, Salahuddin; Osmanoğlu, Sinan; Öztürk, Mustafa; Çankaya, Büşra; Yılmaz, Doğan; Kashif, A. U.; Özbay, Ekmel (Institute of Electrical and Electronics Engineers, 2020)
      In this paper, we report two low noise broadband amplifiers based on ABMN's AlGaN/GaN on SiC HEMT technology for X-band applications. Two design topologies, a single-stage (LNA-1) and a two-stage (LNA-2), have been ...
    • GaN-based single stage low noise amplifier for X-band applications 

      Çağlar, Gizem Tendürüs; Aras, Yunus Erdem; Urfalı, Emirhan; Yılmaz, Doğan; Özbay, Ekmel; Nazlıbilek, Sedat (IEEE, 2022-07-18)
      Source degenerated HEMTs are used to achieve good noise matching and better input return loss without degrading the noise figure and reducing the stability. This work presents an MMIC design for the frequency band of 8–11 ...
    • A high gain and high efficiency 15 W X-Band GaN power amplifier MMIC 

      Gürdal, Armağan; Özipek, Ulaş; Sütbaş, Batuhan; Özbay, Ekmel (IEEE, 2019)
      An X-band microstrip power amplifier MMIC based on our 0.25 μm AlGaN/GaN on SiC process technology is presented in this work. Fabrication steps, HEMT structure and typical device performance are demonstrated. Design procedure ...
    • Metamaterial Absorber Based Multifunctional Sensor Application 

      Ozer Z.; Mamedov, Amirullah; Özbay, Ekmel (Institute of Physics Publishing, 2017)
      In this study metamaterial based (MA) absorber sensor, integrated with an X-band waveguide, is numerically and experimentally suggested for important application including pressure, density sensing and marble type detecting ...
    • X-band cascode LNA with bias-invariant noise figure using 0.15 µm GaN-on-SiC technology 

      Nawaz, Muhammad Imran; Aras, Yunus Erdem; Zafar, Salahuddin; Akoğlu, Büşra Çankaya; Tendürüs, Gizem; Özbay, Ekmel (IEEE, 2022-07-18)
      Cascode HEMTs exhibit better stability and broad bandwidths performance as compared with common source HEMTs. This paper presents the design of a single stage broadband low noise amplifier based upon 0.15 um GaN HEMT ...