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    • Charge Trapping Memory with 2.85-nm Si-Nanoparticles Embedded in HfO2 

      El-Atab, N.; Turgut, Berk Berkan; Okyay, Ali K.; Nayfeh, A. (Electrochemical Society Inc., 2015)
      In this work, the effect of embedding 2.85-nm Si-nanoparticles charge trapping layer in between double layers of high-κ Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> oxides is studied. Using high frequency (1 MHz) ...