Browsing by Keywords "Ultra-violet photodetectors"
Now showing items 1-5 of 5
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Atomic layer deposited HfO2 based metal insulator semiconductor GaN ultraviolet photodetectors
(Elsevier BV, 2014)A report on GaN based metal insulator semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with atomic layer deposited (ALD) 5-nm-thick HfO2 insulating layer is presented. Very low dark current of 2.24 × 10-11 A and ... -
Integrated AlGaN quadruple-band ultraviolet photodetectors
(IOP Publishing, 2012-04-27)Monolithically integrated quadruple back-illuminated ultraviolet metalsemiconductormetal photodetectors with four different spectral responsivity bands were demonstrated on each of two different Al xGa 1-xN heterostructures. ... -
Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
(SPIE, 2014)Proof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are ... -
Performance enhancement of GaN metal-semiconductor-metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO2 layer
(AVS Science and Technology Society, 2015)The authors demonstrate improved device performance of GaN metal-semiconductor-metal ultraviolet (UV) photodetectors (PDs) by ultrathin HfO2 (UT-HfO2) layer on GaN. The UT-HfO2 interfacial layer is grown by atomic layer ... -
Thin film MoS2 nanocrystal based ultraviolet photodetector
(Optical Society of American (OSA), 2012)We report on the development of UV range photodetector based on molybdenum disulfide nanocrystals (MoS2-NCs). The inorganic MoS2- NCs are produced by pulsed laser ablation technique in deionized water and the colloidal ...
